Semiconductor storage device requiring short time for program voltage to rise

A semiconductor storage device for executing a program using a first program voltage, comprising:

• means for receiving a power source voltage;
• program voltage generating means for generating said first program voltage after the lapse of a predetermined first time after reception of said power source voltage;
• rectifying means connected to said power source voltage and to said program voltage generating means for feeding a current only from said power source voltage to said program voltage generating means side accompanying the boost of said power source voltage,
• said rectifying means boosting the voltage of said program voltage generating means to a second program voltage which is lower than said first program voltage before the lapse of said first time;
• and
• means for stopping the operation of said rectifying means after the elapse of a predetermined time period.

A semiconductor storage device for executing a program using a first program voltage, comprising:

• means for receiving a power source voltage;
• program voltage generating means for generating said first program voltage after the lapse of a predetermined first time after reception of said power source voltage;
• and
• rectifying means connected to said power source voltage and to said program voltage generating means for feeding a current only from said power source voltage to said program voltage generating means side accompanying the boost of said power source voltage,
• said rectifying means boosting the voltage of said program voltage generating means to a second program voltage which is lower than said first program voltage before the lapse of said first time, wherein the lapse of said first time is detected by a reset circuit providing a reset signal, and said rectifying means operates in response to said reset signal.

A semiconductor storage device for executing a program using a first program voltage, comprising:

• means for receiving a power source voltage;
• program voltage generating means for generating said first program voltage after the lapse of a predetermined first time after reception of said power source voltage;
• and
• rectifying means connected to said power source voltage and to said program voltage generating means for feeding a current only from said power source voltage to said program voltage generating means side accompanying the boost of said power source voltage,
• said rectifying means
• i) boosting the voltage of said program voltage generating means to a second program voltage which is lower than said first program voltage before the lapse of said first time, and
• ii) operating in response to a potential difference associated with said program voltage and said power source voltage;
• and
• complementary transistors connected in series between said power source voltage and the ground voltage through a first node, wherein
• one of the complementary transistors is adapted to operate according to the power source voltage,
• the other complementary transistor is adapted to operate according to said ground voltage,
• a voltage associated with said power source voltage is generated through said first node.

A semiconductor storage device for executing a program using a first program voltage, comprising:

• means for receiving a power source voltage;
• program voltage generating means for generating said first program voltage after the lapse of a predetermined first time after reception of said power source voltage;
• and
• rectifying means connected to said power source voltage and to said program voltage generating means for feeding a current only from said power source voltage to said program voltage generating means side accompanying the boost of said power source voltage,
• said rectifying means
• i) boosting the voltage of said program voltage generating means to a second program voltage which is lower than said first program voltage before the lapse of said first time, and
• ii) operating in response to a potential difference associated with said program voltage and said power source voltage;
• and
• complementary transistors connected in series between said power source voltage and the ground voltage through a second node, wherein
• one of the complementary transistors is adapted to operate according to the program voltage,
• the other complementary transistor is adapted to operate according to said ground voltage, a voltage associated with said program voltage is generated through said second node.

A semiconductor storage device for executing a program using a program voltage, comprising:

• means connected to a power source input terminal for detecting the rise of the power source;
• boost means for boosting said program voltage to a predetermined first level while receiving said power source;
• means for actuating said boost means after the lapse of a predetermined time after said detection;
• said boost means including means for preparatorily boosting said program voltage to a second level which is lower than said first level within said predetermined time;
• and
• means for stopping the operation of said preparatory boost means after the lapse of said predetermined time.

A method for generating a program voltage for a semiconductor storage device for executing a program using a predetermined first voltage, comprising the steps of:

• detecting a power source voltage;
• boosting said program voltage to a second voltage lower than a first voltage according to the detected power source voltage;
• and
• boosting said program voltage to said first predetermined voltage subsequently to said boost to the second voltage, wherein
• said predetermined first voltage is generated by a boost circuit,
• said semiconductor storage device delivers a reset signal to start the operation of said boost circuit, and
• said reset signal is delivered subsequently to the boost to said second voltage.

A semiconductor storage device for executing a program using a program voltage at a first level, comprising:

• means for receiving a power source voltage including a power-on reset circuit for providing a power-on reset signal a predetermined period of time after the rise of said power source voltage;
• means for detecting the course of rise of the level of said power source voltage;
• means for boosting said program voltage while following said course of rise of the level of said power source voltage and providing a program voltage at a second level, less than the first level, prior to the power-on reset circuit providing the power-on reset signal;
• and
• program voltage generating means, responsive to the power-on reset signal from the power-on reset circuit, for boosting said program voltage at said second level to said program voltage at said first level.