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US 5,631,773 AGranted
Image projection method and semiconductor device manufacturing method using the same
AssigneeCanon Kabushiki Kaisha
InventorAkiyoshi Suzuki
Life of this patent
Estimating the term…
Abstract
An edge emphasis type phase shift reticle is illuminated obliquely, and zeroth order diffraction light and first order diffraction light caused by a fine pattern of the reticle and having substantially the same intensity are incident and distributed on a pupil of a projection optical system, symmetrically with respect to a predetermined axis, whereby the fine pattern is imaged with use of the zeroth order diffraction light and first order diffraction light.
Claims10
A projection exposure apparatus comprising:
- illumination means for illuminating a reticle;
- a projection optical system for projecting a pattern of the reticle onto a wafer;
- first detecting means for detecting a light intensity distribution on an image plane of said projection optical system;
- and
- second detecting means for detecting a light intensity distribution on a pupil of said projection optical system.
2 more elements
Dependencies are inferred from the claim text.