Power output stage with limited current absorption during high-impedance phase
AssigneeSGS-Thomson Microelectronics S.A.
InventorLuca Bertolini
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AssigneeSGS-Thomson Microelectronics S.A.
InventorLuca Bertolini
Estimating the term…
A power stage of quasi-complementary symmetry, including a common-source FET and a common-drain FET, with a reduced absorption of current under the conditions of high impedance of the output. The driving node of the upper (common-drain) transistor from is decoupled from the output node of the stage, preventing the current generator Id, which discharges the control node, from absorbing current from the load connected to the output stage, during a phase of high output impedance. This is preferably realized by using a field effect transistor which has its gate connected to the output node of the stage, and is connected to provide the current drawn from the discharge generator of the driving node of the upper common-drain transistor, absorbing it from the supply node VDD instead of absorbing it from the voltage overdriven node Vb. This alternative solution avoids excessive loading of the high-voltage supply, and is particularly useful when the overdriven node Vb drives multiple output stages.
An integrated driver circuit for driving an N-channel power field-effect transistor which is connected between an output node and a first positive supply voltage, comprising:
An integrated motor driver circuit, comprising:
An integrated motor driver circuit, comprising:
An integrated circuit for driving a power transistor which is connected between an output node and a first supply voltage having a control voltage which is necessary to turn on said power transistor if connected to the gate thereof, comprising:
A power stage, comprising:
An integrated circuit, comprising:
An integrated circuit, comprising:
A method for controlling the current drawn from a load to be driven alternatively by a pair of power transistors, comprising the steps of:
Dependencies are inferred from the claim text.