Semiconductor device and motor driver circuit using the same
AssigneeNEC Corporation
InventorMasayuki Hattori
Life of this patent
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Abstract
In a semiconductor device including a field effect transistor comprising a base area, a source area, a drain area and a gate area provided on a channel forming area via a gate insulating area, the base area portion being sandwiched by the source area and the drain area, there is provided a drain electrode contacting the drain area, a source electrode contacting only the source area and a gate electrode contacting the gate area. Because this arrangement does not incorporate a parasitic diode, it can be used in a system utilizing the back electromotive force of the motor, in which a reverse current blocking diode is not included and a highly efficient driver circuit can be arranged. Further, there is provided a motor driver circuit utilizing such a semiconductor device.
Claims7
A semiconductor device including a field effect transistor formed in a semiconductor substrate comprising:
- a first base area;
- a second base area provided in said first base area;
- a drain area provided in said first base area;
- a source area provided in said second base area;
- a third base area provided in said second base area and having a higher density than that of said second base area;
- an insulation film provided between said source area and said drain area on said semiconductor substrate;
- a gate electrode provided on said insulation film;
- a drain electrode connected to said drain area;
- and
- a source electrode contacting said source area and not electrically contacting said third base area.
A semiconductor device including a field effect transistor comprising:
- a semiconductor substrate constituting a drain area;
- a first base area provided in the surface of said drain area;
- a second base area provided in said first base area and having a higher density than that of said first base area;
- a source area provided in said first base area;
- an insulation film provided on said first base area;
- a gate electrode provided on said insulation film;
- a drain electrode connected to said drain area;
- and
- a source electrode contacting to said source area and not electrically contacting said second base area;
- wherein said drain electrode is provided on the lower surface of said semiconductor substrate.
Dependencies are inferred from the claim text.