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AssigneeMitsubishi Cable Industries, Ltd.
InventorsShinichi Watabe, Hiroaki Okagawa, Takayuki Hashimoto, Kazuyuki Tadatomo
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A semiconductor light emitting element comprising a light emitting part comprising an AlGaInP active layer and a AlGaInP cladding layer, which is formed on a GaAs substrate, and an AlGaAs layer and a Ga.sub.x In.sub.1-x P layer (0.7.ltoreq.x.ltoreq.1.0) deposited in this order on said light emitting part, wherein said Ga.sub.x In.sub.1-x P layer has a thickness of not more than 1.0 .mu.m. According to the present invention, absorption of the emitted light by an electrode contact layer and the occurrence of an interfacial distortion between the electrode contact layer and the layer thereunder can be suppressed, and a semiconductor light emitting element permitting easy production thereof and having a high luminance and a long service life can be provided.
A semiconductor light emitting element comprising a light emitting part comprising an AlGaInP active layer and an AlGaInP cladding layer, which is formed on a GaAs substrate, and an AlGaAs layer and a Ga.sub.x In.sub.1-x P layer (0.7.ltoreq.x.ltoreq.1.0) deposited in this order on said light emitting part, wherein said Ga.sub.x In.sub.1-x P layer has a thickness of not more than 1.0 .mu.m.
A semiconductor light emitting element comprising a first conductive type AlGaInP cladding layer, an AlGaInP active layer, a second conductive type AlGaInP cladding layer, a second conductive type AlGaAs layer and a second conductive type Ga.sub.x In.sub.1-x P layer (0.7.ltoreq.x.ltoreq.1.0) deposited in this order on a first conductive type GaAs substrate, wherein said Ga.sub.x In.sub.1-x P layer has a thickness of not more than 1.0 .mu.m.
A semiconductor light emitting element comprising an AlGaInP active layer, a second conductive type AlGaInP cladding layer, a second conductive type AlGaAs layer and a second conductive type Ga.sub.x In.sub.1-x P layer (0.7.ltoreq.x.ltoreq.1.0) deposited in this order on a first conductive type GaAs substrate, wherein said Ga.sub.x In.sub.1-x P layer has a thickness of not more than 1.0 .mu.m.
Dependencies are inferred from the claim text.