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US 5,631,428 AGranted
Capacitive semiconductor pressure sensor
AssigneeSiemens Aktiengesellschaft
InventorsRalf Catanescu, Thomas Scheiter, Christofer Hierold
Life of this patent
Estimating the term…
Abstract
A micromechanically manufacturable pressure sensor has a cavity produced in an auxiliary layer that is covered with a membrane layer, the cavity is produced via recesses in the membrane layer. These recesses are subsequently closed by portions of a closure layer. Further layers can be applied on the closure layer. Portions of the further layers and closure layer are removed above the membrane layer.
Claims9
A semiconductor component pressure sensor, comprising:
- an electrically conductive region;
- a layer over the electrically conductive region defining a cavity;
- an electrically conductive membrane layer overlying the cavity;
- recesses in the membrane layer above the cavity;
- a closure layer applied on the membrane layer;
- said membrane layer being deformable so that given a change of pressure within a predetermined interval at a side of the membrane layer facing away from the cavity, the membrane layer can deflect so as to cause a change of electrical capacitance defined by the conductive region and the electrically conductive membrane layer;
- electrical contacts respectively connected to the membrane layer and conductive region for measuring said change of electrical capacitance;
- and
- a material of the closure layer being introduced into said recesses.
6 more elements
A semiconductor component pressure sensor, comprising:
- an electrically conductive region;
- a layer over the electrically conductive region defining a cavity;
- an electrically conductive membrane layer overlying the cavity;
- recesses in the membrane layer above the cavity;
- a closure layer applied on the membrane layer;
- said membrane layer being deformable so that given a change of pressure within a predetermined interval at a side of the membrane layer facing away from the cavity, the membrane layer can deflect so as to cause a change of electrical capacitance defined by the conductive region and the electrically conductive membrane layer;
- electrical contacts respectively connected to the membrane layer and conductive region for measuring said change of electrical capacitance;
- and
- an opening through said closure layer to said membrane layer for permitting said pressure to be exerted directly on said membrane layer.
6 more elements
A semiconductor component pressure sensor, comprising:
- an electrically conductive region:
- a layer over the electrically conductive region defining a cavity
- an electrically conductive membrane layer overlying the cavity;
- recesses in the membrane layer above the cavity;
- a closure layer applied on the membrane layer;
- said membrane layer being deformable so that given a change of pressure within a predetermined interval at a side of the membrane layer facing away from the cavity, the membrane layer can deflect so as to cause a change of electrical capacitance defined by the conductive region and the electrically conductive membrane layer;
- electrical contacts respectively connected to the membrane layer and conductive region for measuring said change of electrical capacitance;
- and
- said electrically conductive membrane layer comprising polysilicon.
6 more elements
A semiconductor component pressure sensor, comprising:
- an electrically conductive region;
- a layer over the electrically conductive region defining a cavity;
- an electrically conductive membrane layer overlying the cavity;
- recesses in the membrane layer above the cavity;
- a closure layer applied on the membrane layer;
- said membrane layer being deformable so that given a change of pressure within a predetermined interval at a side of the membrane layer facing away from the cavity, the membrane layer can deflect so as to cause a change of electrical capacitance defined by the conductive region and the electrically conductive membrane layer;
- electrical contacts respectively connected to the membrane layer and conductive region for measuring said change of electrical capacitance;
- and
- said membrane layer comprising metal.
6 more elements
A semiconductor component pressure sensor, comprising:
- an electrically conductive region;
- a layer over the electrically conductive region defining a cavity;
- an electrically conductive membrane layer overlying the cavity;
- recesses in the membrane layer above the cavity;
- a closure layer applied on the membrane layer, a material of the closure layer being introduced into the recesses to close them off;
- said membrane being deformable so that given a change of pressure within a predetermined interval at a side of the membrane facing away from the cavity, the membrane can deflect so as to cause a change of electrical capacitance defined by the conductive region and the electrically conductive membrane layer;
- electrical contacts respectively connected to the membrane layer and conductive region for measuring said change of electrical capacitance;
- and
- an opening through said closure layer down to said membrane layer for permitting said pressure to be exerted on said membrane layer.
6 more elements
Dependencies are inferred from the claim text.