Furnace for manufacturing a semiconductor device, and a method of forming a gate oxide film by utilizing the same
AssigneeHyundai Electronics Industries Co., Ltd.
InventorMi Ra Park
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Abstract
A furnace for manufacturing a semiconductor device and a method of forming a gate oxide film by utilizing the same is disclosed, which can decrease the budget of the device and improve the quality of the oxide film. First N.sub.2 O gas in a source furnace maintained at a high temperature. This eliminates factors contributing to poor quality. These factors include the increase of H.sub.2 generated as a result of the difference in the resolving temperatures of N.sub.2 O and NH.sub.3 in the oxidization process. Also, the invention results in the oxidizing a selected portion of a wafer by making N.sub.2 O and NH.sub.3 react in the main furnace maintained at low temperature.
Claims3
A method of manufacturing a semiconductor device by utilizing a furnace to form a gate oxide film, comprising the steps of:
- loading wafers into a main furnace of constant temperature, and injecting a N.sub.2 O gas into a source furnace of constant temperature through a second gas inlet;
- raising the temperatures of said main furnace in a ramp-up process and resolving the N.sub.2 O in said source furnace by raising the temperature of the source furnace in a ramp-up process;
- stabilizing the inside of said main furnace under N.sub.2 gas environment;
- allowing the resolved N.sub.2 O gas in said source furnace to flow into said main furnace through a connection pipe;
- conducting a preoxidization process in said main furnace;
- injecting NH.sub.3 gas into said main furnace through a first gas inlet;
- conducting a main oxidization process in said main furnace under an environment of said resolved N.sub.2 O gas and said injected NH.sub.3 gas;
- conducting a purge process in said main furnace under the environment of said resolved N.sub.2 O gas;
- heat treating the wafer under an N.sub.2 gas environment;
- performing a ramp down process to lower the temperature of said main furnace;
- and
- unloading said wafers.
A method of forming agate oxide film by utilizing a furnace for manufacturing a semiconductor device, comprising the steps of:
- loading wafers into a main furnace of constant temperature, and injecting a N.sub.2 O gas into a source furnace of constant temperature through second gas inlet;
- raising the temperatures of said main furnace and source furnace by performing a ramp up process for each furnace;
- stabilizing the inside of said main furnace under N.sub.2 gas environment, and conducting a preoxidization process after the N.sub.2 O gas resolved in said source furnace flows into said main furnace through a connection pipe;
- conducting a main oxidization process under an environment of said resolved N.sub.2 O gas and NH.sub.3 gas injected through a first gas inlet;
- conducting a purge process under the environment of said resolved N.sub.2 O gas;
- and
- heat treating the wafer under N.sub.2 gas environment, and thereafter, performing a ramp down process to lower the temperature of said main furnace, and unloading said wafers,
- wherein the ratio of the N.sub.2 O gas flow supplied from said source furnace in the main oxidation process is 2% through 10%.
Dependencies are inferred from the claim text.