Method for making semiconductor device having high energy sustaining capability and a temperature compensated sustaining voltage

A method of forming a semiconductor device, comprising the steps of:

• providing a semiconductor substrate of the first conductivity type;
• forming a gate oxide layer on the semiconductor substrate;
• forming a polysilicon layer on the gate oxide layer;
• removing a portion of the polysilicon layer;
• forming a region of the second conductivity type in the semiconductor substrate and in the polysilicon layer;
• forming a patterned masking layer on a portion of the polysilicon layer;
• forming a region of the first conductivity type in the region of the second conductivity type in the semiconductor substrate and in the polysilicon layer where the patterned masking layer is not disposed to form a plurality of back-to-back diodes in a polysilicon layer;
• electrically connecting the plurality of back-to-back diodes in the polysilicon layer and the semiconductor substrate of the semiconductor device, wherein the plurality of back-to-back diodes provide for protection of the semiconductor device from avalanche stress-induced failure;
• and
• forming a resistor electrically connected to the polysilicon layer and the region of the first conductivity type of the semiconductor device.