ITO sputtering target

Abstract

An ITO sputtering target comprised of indium oxide and tin oxide and having a density of at least 6.4 g/cm.sup.3, wherein the center line average height (R.sub.a) of the surface to be sputtered is not larger than 0.8 .mu.m, and at least one property selected from the following (i), (ii) and (iii) is satisfied: (i) the maximum height (R.sub.max) is not larger than 7.0 .mu.m, (ii) the ten point average height (R.sub.z) is not larger than 6.0 .mu.m, and (iii) the maximum height (R.sub.t) of said surface as expressed by the distance between two lines which are parallel to the center line of a surface roughness curve drawn as measured at a sample length of 2.5 mm, and which sandwich said surface roughness curve, is not larger than 6.5 .mu.m. Preferably, R.sub.a and the or each property (R.sub.max, R.sub.z or R.sub.t) selected from (i), (ii) and (iii) satisfy the formula: R.sub.a .times.(R.sub.max, R.sub.z or R.sub.t).ltoreq.3.0 .mu.m.sup.2.

Dependencies are inferred from the claim text.