US 5,630,904 A · Stripping and cleaning agent for removing dry-etching and photoresist residues from a semiconductor substrate, and a method for forming a line pattern using the stripping and cleaning agent

Abstract

Stripping and cleaning agent for removing dry-etching photoresist residues, and a method for forming an aluminum based line pattern using the stripping and cleaning agent. The stripping and cleaning agent contains (a) from 5 to 50% by weight of an organocarboxlic ammonium salt or an amine carboxylate, represented by the formula [R.sup.1 ]m[COONH.sub.p (R.sup.2)q]n, where R.sup.1 is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms; R.sup.2 is hydrogen, or an alkyl group having from 1 to 4 carbon atoms; m and n independently are integers of from 1 to 4, p is integer of from 1 to 4, q is integer of from 1 to 3, and p+q=4 and (b) from 0.5 to 15% by weight of a fluorine compound. The inventive method is advantageously applied to treating a dry-etched semiconductor substrate with the stripping and cleaning agent. The semiconductor substrate comprises a semiconductor wafer having thereon a conductive layer containing aluminum. The conductive layer is dry-etched through a patterned photoresist mask to form a wiring body having etched side walls. The dry etching forms a side wall protection film on the side walls. In accordance with the inventive method, the side wall protection film and other resist residues are completely released without corroding the wiring body.

Claims19

Dependent claims

A method for forming a line pattern comprising:

providing a semiconductor substrate comprising a semiconductor wafer having thereon a conductive layer containing aluminum;
dry etching the conductive layer through a patterned photoresist mask to form a wiring body having etched side walls and a side wall protection film on said side walls;
and
releasing the side wall protection film by treating the dry-etched semiconductor substrate with a stripping and cleaning agent comprising:
(a) from 5 to 50% by weight of an organocarboxylic ammonium salt or an amine carboxylate, represented by the formula [R.sup.1 ]m[COONH.sub.p (R.sup.2)q]n, where R.sup.1 is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms;
R.sup.2 is hydrogen, or an alkyl group having from 1 to 4 carbon atoms;
m and n independently are integers of from 1 to 4, p is an integer of from 1 to 4, q is an integer of from 1 to 3, and p+q=4;
and
(b) from 0.5 to 15% by weight of a fluorine compound.

6 more elements

A stripping and cleaning agent for removing dry-etching photoresist residues from a semiconductor substrate having thereon an aluminum based wiring body formed in a dry-etching step using a photoresist pattern as an etching mask, comprising:

(a) from 5 to 50% by weight of an organocarboxylic ammonium salt or an amine carboxylate, represented by the formula [R.sup.1 ]m[COONH.sub.p (R.sup.2)q]n, where R.sup.1 is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms;
R.sup.2 is hydrogen, or an alkyl group having from 1 to 4 carbon atoms;
m and n independently are integers of from 1 to 4, p is an integer of from 1 to 4, q is an integer of from 1 to 3, and p+q=4;
and
(b) from 0.5 to 15% by weight of a fluorine compound.

2 more elements

(a) from 5 to 50% by weight of an organocarboxylic ammonium salt or an amine carboxylate, represented by the formula [R.sup.1 ]m[COONH.sub.p (R.sup.2)q]n, where R.sup.1 is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms;
R.sup.2 is hydrogen, or an alkyl group having from 1 to 4 carbon atoms;
m and n independently are integers of from 1 to 4, p is an integer of from 1 to 4, q is an integer of from 1 to 3, and p+q=4;
(b) from 0.5 to 15% by weight of a fluorine compound;
and
(c) from 1 to 50% by weight of at least one organic solvent selected from the group consisting amides, lactones, nitriles, alcohols and esters.

3 more elements

Dependencies are inferred from the claim text.

Stripping and cleaning agent for removing dry-etching and photoresist residues from a semiconductor substrate, and a method for forming a line pattern using the stripping and cleaning agent

Life of this patent

Stripping and cleaning agent for removing dry-etching and photoresist residues from a semiconductor substrate, and a method for forming a line pattern using the stripping and cleaning agent

Life of this patent

Abstract

Claims19