Integrated structure bipolar transistors with controlled storage time
AssigneeConsorzio per la Ricerca sulla Microelettronica nel Mezzogiorno
InventorFerruccio Frisina
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Abstract
Integrated structure bipolar transistors with controlled storage time are manufactured by forming at least one bipolar transistor occupying a first area on a first surface of the silicon material, covering the first surface of the silicon material with an insulating material layer, and selectively removing the insulating material layer to open a window. The window has a second area much smaller than the first area occupied by the bipolar transistor. Therefore, by implanting into the silicon material a medium dose of platinum ions through the window and diffusing into the silicon material the implanted platinum ions, a uniform distribution of platinum inside the transistor is obtained.
Claims6
A semiconductor wafer to be subjected to a dose of ions, the dose being diffused throughout a portion of the semiconductor wafer, the semiconductor wafer comprising:
- a) a transistor that occupies a first portion of the semiconductor wafer, the first portion defining a first area of a first surface of the semiconductor wafer;
- and
- b) a layer of protective material on the first surface of the semiconductor wafer, the layer including at least one window that exposes only a second area of the first surface of the semiconductor wafer to receive the dose of ions, a ratio between the second area and the first area being approximately 1/1000.
Dependencies are inferred from the claim text.