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US 5,629,552 AGranted
Stable high voltage semiconductor device structure
AssigneeIXYS Corporation
InventorNathan Zommer
Life of this patent
Estimating the term…
Abstract
A power integrated circuit device with multiple guard rings and field plates overlying regions between each of the guard rings. Each of the field plates form overlying a dielectric layer also between each of the guard rings. Multiple field plates can exist between each of such guard rings. At least one field plate couples to a main junction region, and another field plate couples to a peripheral region, typically a scribe line. The present power device structure with multiple guard rings and field plates provides a resulting guard ring structure which allows for such device to achieve higher voltage applications.
Claims24
A power device comprising:
- a semiconductor substrate comprising a top surface with an active region, a guard ring region, and a peripheral region, said active region including a junction region;
- a plurality of guard rings formed into said semiconductor substrate in said guard ring region, said guard ring region being between said active region and said peripheral region, said plurality of guard rings comprising a first guard ring nearest to said junction region and a last guard ring nearest to said peripheral region;
- a dielectric layer overlying said top surface and having portions between each of said plurality of guard rings, said dielectric layer having a portion between said junction region and said first guard ring, said dielectric layer having a portion between said last guard ring and said peripheral region;
- and
- a field plate layer, said field plate layer comprising portions each overlying each of said dielectric layer portions between each of said plurality of guard rings, said field plate layer having a portion overlying said dielectric layer portion between said junction region and said first guard ring, and said field plate layer having a portion overlying said dielectric layer portion between said last guard ring and said peripheral region;
- wherein at least one of said portions of said field plates being a floating plate structure to provide a more uniform distribution of an electric field underlying said floating plate structure.
3 more elements
A power device comprising:
- a semiconductor substrate comprising a top surface with an active region, a guard ring region, and a peripheral region, said active region including a junction region;
- a plurality of guard rings formed into said semiconductor substrate in said guard ring region, said guard ring region being between said active region and said peripheral region, said plurality of guard rings comprising a first guard ring nearest to said junction region and a last guard ring nearest to said peripheral region;
- a dielectric layer overlying said top surface and having portions between each of said plurality of guard rings, said dielectric layer having a portion between said junction region and said first guard ring, said dielectric layer having a portion between said last guard ring and said peripheral region;
- and
- a field plate layer, said field plate layer comprising a plurality of field plates overlying each of said dielectric layer portions between each of said plurality of guard rings, said field plate layer overlying said dielectric layer portion between said junction region and said first guard ring, and said field plate layer comprising a plurality of field plates overlying said dielectric layer portion between said last guard ring and said peripheral region.
2 more elements
A power device comprising:
- a semiconductor substrate comprising a top surface with an active region, a guard ring region, and a peripheral region, said active region including a junction region;
- a plurality of guard rings formed into said semiconductor substrate in said guard ring region, said guard ring region being between said active region and said peripheral region, said plurality of guard rings comprising a first guard ring nearest to said junction region and a last guard ring nearest to said peripheral region;
- a dielectric layer overlying said top surface and having portions between each of said plurality of guard rings, said dielectric layer having a portion between said junction region and said first guard ring, said dielectric layer having a portion between said last guard ring and said peripheral region;
- and
- a field plate layer, said field plate layer overlying each of said dielectric layer portions between each of said plurality of guard rings, said field plate layer overlying said dielectric layer portion between said junction region and said first guard ring, and said field plate layer overlying said dielectric layer portion between said last guard ring and said peripheral region, said field plate layer overlying said dielectric layer portion between said last guard ring and said peripheral region comprise a plurality of field plates, said plurality of field plates comprising a first field plate and a second field plate, said first field plate being separated from said second field plate.
2 more elements
Dependencies are inferred from the claim text.