High voltage current limiter and method for making

A semiconductor device comprising:

• an body of semiconductor material of a first conductivity having a surface
• a first doped region of the first conductivity formed in the body of semiconductor material and contiguous with the surface;
• a second doped region of a second conductivity formed in the body of semiconductor material providing a channel region between the first doped region and the body of semiconductor material;
• a third doped region of the first conductivity formed in the body of semiconductor material;
• a fourth doped region of the second conductivity formed in the body of semiconductor material so that when a voltage potential is applied to the body of semiconductor material, a depletion region is formed and a current flow is directed from the body of semiconductor material, through the depletion region, and through the third doped region;
• and
• a metallized layer formed contiguous with the surface of the body of semiconductor material such that the second doped region, the third doped region, and the fourth doped region are electrically connected.

An AC current limiter comprising:

• a first current limiter;
• a second current limiter, wherein the first current limiter and the second current limiter each comprise:
• an body of semiconductor material of a first conductivity having a surface
• a first doped region of a second conductivity formed in the body of semiconductor material and contiguous with the surface;
• a second doped region of the first conductivity formed in the body of semiconductor material providing a channel region between the first doped region and the second doped region;
• a third doped region of the first conductivity formed in the body of semiconductor material such that the third doped region provides a non-modulated path for a current flow across the channel region;
• a fourth doped region of the second conductivity formed in the body of semiconductor material so that when a voltage potential is applied to the body of semiconductor material, a depletion region is formed and the current flow is directed through the third doped region and through the depletion region before entering the body of semiconductor material;
• a conductive layer formed contiguous with the surface of the body of semiconductor material such that the second doped region, the third doped region, and the forth doped region are electrically connected;
• and
• an electrical connection between the first doped region of the first current limiter and the first doped region of the second current limiter.