Process for preparing a layered superconducting structure
AssigneeSumitomo Electric Industries, Ltd.
InventorsSo Tanaka, Takao Nakamura, Michitomo Iiyama
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Abstract
A process for depositing successively a plurality of thin films on a bottom superconductor layer made of oxide superconductor deposited on a substrate in a single chamber under a condition, the bottom superconductor layer is heated in ultra-high vacuum at a temperature which is lower than the oxygen-trap temperature (T.sub.trap) at which oxygen enter into the oxide superconductor but higher than a temperature which is lower by 100.degree. C. than the oxygen-trap temperature (T.sub.trap -100.degree. C.) and then the first thin film is deposited thereon.
Claims18
A process for depositing successively a plurality of films on a bottom superconductor layer made of a YBa.sub.2 Cu.sub.3 oxide superconductor deposited on a substrate, wherein the deposition of said films is carried out in a single chamber successively, and wherein the deposition of a first film to be deposited directly on said bottom YBa.sub.2 Cu.sub.3 oxide superconductor layer is carried out under a condition wherein:
- said bottom superconductor layer is heated in an ultra-high vacuum of lower than 1.times.10.sup.-9 Torr, at a temperature which is lower than an oxygen-trap temperature (T.sub.trap), but higher than a temperature which is lower by 100.degree. C. than said oxygen-trap temperature (T.sub.trap -100.degree. C.), said ultra-high vacuum being maintained prior to the deposition of said first film.
A process for depositing successively a plurality of films on a bottom superconductor layer made of a YBa.sub.2 Cu.sub.3 oxide superconductor deposited on a substrate, wherein
- the deposition of said films is carried out in a single chamber successively,
- prior to deposition of a first film to be deposited directly on said bottom YBa.sub.2 Cu.sub.3 oxide superconductor layer, said chamber is evacuated lower than 10.sup.-9 Torr, and then
- said first film is deposited in an atmosphere of oxygen having a purity of higher than 5N (99.999%) at a temperature range of said bottom superconductor between a film forming temperature of said bottom superconductor layer and a temperature which is lower by 100.degree. C. than the oxygen-trap temperature (T.sub.trap) at which oxygen enter into said oxide superconductor (T.sub.trap -100.degree. C.).
Dependencies are inferred from the claim text.