Fabrication method of semiconductor accelerometer
AssigneeNEC Corporation
InventorTadahiro Matsuzaki
Life of this patent
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Abstract
Using a p-type silicon substrate 1 having on its front surface an n-type silicon layer 2 with a thickness of twice or more of the desired thickness for the beam, an electrochemical etching is performed from the rear surface and the etching is stopped at the beam thickness which is twice or more of the desired thickness. Etching for the beam part 8 from the rear surface proceeds along with the etching for the gap part 9 from the front surface, and a desired thickness for the beam can be formed by completing the etching at the timing when the gap part is opened through.
Claims5
A method of fabricating a semiconductor acceleration sensor comprising the steps of:
- providing a silicon wafer having laminated structure of a first substrate of a first conductivity type silicon and a second substrate of a second conductivity type silicon, said second substrate being provided on a front surface of said first substrate and having a thickness of two or more times a desired thickness of a beam part;
- forming a first mask for forming a supporting part and a weight part on a rear surface of said first substrate, said beam part being connected to said supporting part and said weight part;
- removing a portion of said first substrate between said supporting part and said weight part by applying an electrochemical etching to said rear surface of said first substrate via said first mask;
- stopping the removing step at the interface of said first substrate and said second substrate;
- providing an opening in said first mask for etching a gap part;
- forming a second mask for etching said gap part away from said beam part on a front surface of said second substrate in a region between said supporting part and said weight part;
- and
- opening said gap part by carrying out an etching from a rear surface and said front surface of said wafer via said first and second masks, respectively.
A method of fabricating a semiconductor acceleration sensor comprising the steps of:
- providing a silicon wafer having laminated structure of a first substrate of a first conductivity type silicon and a second substrate of a second conductivity type silicon, said second substrate being provided on a front surface of said first substrate and having a thickness of two or more times a desired thickness of a beam part;
- forming a first mask for forming a supporting part, a weight part and etching end detector region on a rear surface of said first substrate, said beam part being connected to said supporting part and said weight part;
- removing a portion of said first substrate between said supporting part and said weight part and a portion of said first substrate corresponding to said detector region by applying an electrochemical etching to said rear surface of said first substrate via said first mask;
- stopping the removing step at the interface of said first substrate and said second substrate;
- providing openings in said first mask for etching a gap part and a V-shaped groove;
- forming a second mask for etching said V-shaped groove and said gap part away from said beam part on a front surface of said second substrate in a region between said supporting part and said weight part;
- opening said gap part and said V-shaped groove by carrying out a second etching from a rear surface and said front surface of said wafer via said first and second masks, respectively;
- and
- stopping said second etching by detecting that said V-shaped groove is opened through.
Dependencies are inferred from the claim text.