Method for forming conductive line of semiconductor device

A method for forming a conductive line of a semiconductor device, comprising the steps of:

• (a) providing a lower structure;
• (b) forming a fluoride doped oxide layer on said lower structure;
• (c) etching said fluoride doped oxide layer in a region where a conductive line is to be formed to form a trench;
• (d) forming an insulating layer on a surface of said fluoride doped oxide layer and on a surface of said trench;
• (e) anisotropically etching said insulating layer to form a spacer on a side wall of said trench;
• (f) depositing conductive material on said fluoride doped oxide layer and in said trench;
• and
• (g) etching said conductive material so that said conductive material is left only in said trench to form a conductive line.

A method for forming a conductive line of semiconductor device, comprising the steps of:

• (a) providing a lower structure, the lower structure being one of a semiconductor substrate on which a lower conductive line is formed and a semiconductor substrate in which an impurity layer is formed;
• (b) forming an insulating material layer on the lower structure;
• (c) forming a contact hole for exposing one of said lower conductive line and said impurity layer;
• (d) depositing a first conductive material on a surface of said insulating material layer and in said contact hole;
• (e) etching said first conductive material to form a plug layer which fills said contact hole;
• (f) forming a fluoride doped oxide layer on surfaces of said insulating material layer and said plug layer;
• (g) etching said fluoride doped oxide layer to form a trench and to expose said plug layer;
• (h) forming an insulating layer on a surface of said fluoride doped oxide layer and on a surface of said trench;
• (i) anisotropically etching said insulating layer to form a spacer on a side wall of said trench;
• (j) depositing a second conductive material on said fluoride doped oxide layer and in said trench;
• and
• (k) etching said second conductive material so that said second conductive material is left only in said trench to form a conductive line.