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US 5,629,231 AGranted
Method of manufacturing a semiconductor device with metallic precipitate
AssigneeFujitsu Limited
InventorRichard A. Kiehl
Life of this patent
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Abstract
A superlattice of LT-GaAs layers and another semiconductor layers such as LT-AlGaAs or HT-GaAs is grown on a substrate. Lattice imperfectness such as strain or crystal defects is selectively introduced. Then, the superlattice is annealed to produce As precipitates at selected locations of the LT-GaAs layers. When strain is given by metal electrodes, anisotropic etching and self-alined metal deposition can be done utilizing these electrodes. Various semiconductor devices, particularly SET device can be manufactured utilizing those metallic precipitates.
Claims20
A method of manufacturing a semiconductor device comprising the steps of:
- growing a compound semiconductor laminate on a semiconductor substrate, the laminate including a layer of first kind having non-stoichiometric composition and a property of producing metallic precipitates upon annealing at a sufficiently high temperature, and a pair of layers of second kind sandwiching the first kind;
- selectively affording at least one region having imperfectness of crystallinity in said first kind layer;
- and
- annealing said laminate at a sufficiently high temperature to produce a metallic precipitate in said first kind layer at a position defined by said at least one region having said imperfectness.
1 more element
Dependencies are inferred from the claim text.