Metalorganic chemical vapor deposition of (Ba.sub.1-x Sr.sub.x)RuO.sub.3 /(Ba.sub.1-x Sr.sub.x)TIO.sub.3 /(Ba.sub.1-x Sr.sub.x)TiO.sub.3 /(Ba.sub.1- Sr.sub.x)RuO.sub.3 capacitors for high dielectric materials

A method of making a high capacitance capacitor for a memory device comprising the steps of:

• a) providing a semiconductor substrate;
• b) heating the substrate;
• c) exposing the semiconductor substrate to precursors including at least Ru(C.sub.5 H.sub.5).sub.2 for depositing a layer of (Ba.sub.1-x Sr.sub.x)RuO.sub.3 on the substrate forming a bottom electrode;
• d) following step c), exposing the semiconductor substrate to precursors including at least Ti(OC.sub.2 H.sub.5).sub.4 for depositing a layer of (Ba.sub.1-x Sr.sub.x)TiO.sub.3 on the bottom electrode forming a ferroelectric;
• and
• e) following step d), exposing the semiconductor substrate in a vacuum to precursors including at least Ru(C.sub.5 H.sub.5).sub.2 for depositing a layer of (Ba.sub.1-x Sr.sub.x)RuO.sub.3 on the ferroelectric forming a top electrode.