Method for forming a field-effect transistor including a mask body and source/drain contacts

A method for constructing a transistor, comprising the steps of:

• forming a gate conductor;
• forming a gate insulator outwardly from and adjacent the gate conductor;
• forming a channel layer outwardly from the gate insulator and insulated from the gate conductor by the gate insulator, the channel layer comprising a semiconductor material, a portion of said channel layer comprising a channel region;
• forming an insulative mask body of a selected thickness outwardly from said channel region;
• introducing impurities into first and second exposed regions of the channel layer adjacent opposite ends of the insulative mask body to form first and second source/drain regions spaced apart by said channel region;
• forming first and second conductive bodies adjacent and electrically coupled respectively to the first and second source/drain regions, said first and second conductive bodies being formed within the insulative mask body and having a thickness less than the selected thickness;
• forming an insulating layer overlying said first and second conductive bodies and said insulative mask body;
• forming a first contact hole within said insulating layer to expose at least a portion of said first conductive body and forming a second contact hole within said insulating layer to expose at least a portion of said second conductive body;
• and
• forming first and second electric contacts within the first and second contact holes and adjacent and electrically coupled respectively to the first and second conductive bodies.

A method for constructing a transistor, comprising the steps of:

• forming a gate conductor;
• forming a gate insulating layer over said gate conductor;
• depositing a layer of semiconductor material on said gate insulator layer to form a channel wherein said channel layer comprises a partially recrystallized semiconductor material;
• forming a first source/drain region and a second source/drain region within the channel layer and spaced apart so as to define the channel region between the first source/drain region and the second source/drain region, the gate conductor being operable to electrically actuate the channel region;
• forming a first conductive body above and electrically coupled to the first source/drain region;
• and.

A method of forming a transistor comprising the steps of:

• forming a gate conductor;
• forming a channel layer insulatively disposed above the gate conductor and including a channel region;
• forming a mask body over said channel layer, said mask body formed so as to expose a first region and a second region within said channel layer, wherein said first region and said second region are separated by said channel region;
• doping said first region to form a first source/drain region and doping said second region to form a second source/drain region, said first and second source/drain regions self-aligned to said mask body;
• conformally depositing a conductive layer and then, without patterning, etching the conductive layer to form a first conductive body over said first source/drain region and abutting said mask body and to form a second conductive body over said second source/drain region and abutting said mask body;
• and
• forming a first electrically conductive region adjacent and electrically coupled to the first conductive body.