Positive electron beam resist composition containing cresolnovolak resin, select additive and methyl gallate/1,2-naphthoquinonediazido-4-sulfonyl chloride reaction product

A positive electron beam resist composition, comprising (1) a cresolnovolak resin, (2) at least one additive selected from the group consisting of compounds represented by the following general formulae (I) and (II):

• ##STR9## wherein R.sup.1, R.sup.2 and R.sup.3 are each selected from the group consisting of hydrogen, an alkyl group, an aralkyl group and an aryl group;
• R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9, R.sup.10 and R.sup.11 are each selected from the group consisting of hydrogen, a halogen, a hydroxyl group and an alkyl group;
• m is an integer from 0 to 3;
• and n is an integer from 0 to 1 ##STR10## wherein X is ##STR11## and R is an alkyl group or aralkyl group and (3) an electron beam sensitive quinonediazide compound obtained by reacting methyl gallate and 1,2-naphthoquinonediazido-4-sulfonyl chloride with each other, as main ingredients, where the amount of the additive (2) is 5 to 20 wt % based on the weight of the resist solid;
• the amount of the quinonediazide compound (3) is 10 to 20 wt % based on the weight of the resist solid;
• and the triester content in said electron beam sensitive quinonediazide compound (3) is 30 to less than 55 wt % based on the weight of said electron beam sensitive quinonediazide compound.