US 5,629,114 A · Phase shift mask and manufacturing method thereof and exposure method using phase shift mask comprising a semitransparent region

Abstract

A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide or a molybdenum silicide oxide a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of 5-40%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film or a molybdenum silicide oxide film a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.

Claims19

Dependent claims

A method of manufacturing a phase shift mask, which method comprises:

sputtering a phase shifter film of a prescribed thickness on a substrate, said phase shifter film consisting of a single material having a phase of transmitted exposure light converted by 180.degree. and having transmittance of 5% to 40%;
forming a resist film having a prescribed pattern on the phase shifter film;
and
dry etching said phase shifter film using the resist film as a mask to form a first light transmit portion having said substrate exposed and a second light transmit portion made of said phase shifter film;
wherein said single material is selected from the group consisting of an oxide of a metal, a nitride oxide of a metal, an oxide of a metal silicide and a nitride oxide of a metal silicide.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

08/480,371Filed 7 Jun 1995 · division

Priority

JP 4-335523(P)21 Nov 1992

Granted

13 May 1997

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

G03F 1/80
Preparation processes not covered by groups G03F1/20 - G03F1/50: etching
G03F 1/32
Phase shift masks [PSM]; PSM blanks; Preparation thereof: attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift…
G03F 1/38
Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles…
G03F 1/54
Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles…

Phase shift mask and manufacturing method thereof and exposure method using phase shift mask comprising a semitransparent region

Life of this patent

Phase shift mask and manufacturing method thereof and exposure method using phase shift mask comprising a semitransparent region

Life of this patent

Abstract

Claims19