Apparatus for fabricating semiconductor lasers
AssigneeThe Board of Regents of the University of Oklahoma
InventorPatrick J. McCann
Life of this patent
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Abstract
A semiconductor laser device, and method for making such, having higher operating temperatures than previously available. A semiconductor epitaxial layer is bonding to a cleaving assembly which allows the epitaxial layer to be manipulated without use of traditional substrate forms. The resulting semiconductor laser is bonded to a metal portion which serves as a heat sink for dissipating heat from the active lasing region. The resulting semiconductor lasers can be cooled by thermoelectric cooling modules, thus eliminating the necessity of using more bulky cryogenic systems.
Claims17
A cleaving assembly for producing a semiconductor laser, comprising:
- a plurality of plates, each plate having a first facing surface, a second facing surface, a first side surface, a second side surface, an upper end surface and a lower end surface;
- and
- connecting means for detachably connecting the plates into a plate assembly having a first end and a second end, and
- wherein when the plates are detachably connected into the plate assembly, the plates are positioned against each other such that each plate has at least one facing surface disposed against a facing surface of an adjacent plate and wherein the lower end surfaces of the plates are all oriented in the same plane and cooperate to form a bonding surface, the bonding surface having a semiconductor epitaxial layer bonded thereto.
A cleaving assembly for producing a semiconductor laser, comprising:
- a plate assembly having a first end and a second end and comprising a plurality of plates, each plate having a first facing surface, a second facing surface, a first side surface, a second side surface, an upper end surface and a lower end surface and wherein the plates in the plate assembly are positioned against each other such that each plate has at least one facing surface disposed against a facing surface of an adjacent plate and wherein the lower end surfaces of the plates are all oriented in the same plane and cooperate to form a bonding surface, the bonding surface having a semiconductor epitaxial layer bonded thereto;
- and
- a first end block plate disposed adjacent the first end of the plate assembly and a second end block plate disposed adjacent the second end of the plate assembly, the first end block plate and the second end block plate cooperating to hold the plurality of plates together as the plate assembly.
A cleaving assembly for producing a semiconductor laser, comprising:
- a plurality of plates, each plate having a first facing surface, a second facing surface, a first side surface, a second side surface, an upper end surface and a lower end surface;
- and
- a connector for holding the plates in a plate assembly having a first end and a second end, and
- wherein the plates in the plate assembly are positioned against each other and held by the connector adjacent each other such that each plate has at least one facing surface disposed against a facing surface of an adjacent plate and wherein the lower end surfaces of the plates are all oriented in the same plane and cooperate to form a bonding surface, the bonding surface having a semiconductor epitaxial layer bonded thereto.
Dependencies are inferred from the claim text.