Silicon nitride film formation method
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsYutaka Inaba, Kiyoteru Kobayashi
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Abstract
In the formation of a silicon nitride film, dichlorosilane and ammonia are used as source gas and, for example, argon is used as carrier gas. The pressure (total pressure) inside a chamber is set to about 100 to 300 Torr (1.33.times.10.sup.4 to 4.00.times.10.sup.4 Pa). The desirable setting is that, for example, dichlorosilane is 60 SCCM, ammonia is 300 SCCM and hydrogen is 20 SLM. When the silicon nitride film is formed under such conditions, improvement in a masking effect of the silicon nitride film for preventing oxidation can be achieved.
Claims13
A method of forming a silicon nitride film by low pressure chemical vapor deposition, comprising the steps of:
- (a) introducing a substrate of a silicon film having a silicon oxide film surrounding the silicon film in an upper portion of the substrate into a reaction container;
- (b) evacuating said reaction container;
- and
- (c) introducing a source gas comprising dichlorosilane and ammonia and a carrier gas into said reaction container while maintaining the pressure of gas within said reaction container from 2.00.times.10.sup.4 Pa to 4.00.times.10.sup.4 Pa, thereby depositing said silicon nitride film at a thickness of about 58 .ANG. to about 48 .ANG..
A method of forming a stacked capacitor, comprising the steps of:
- (a) preparing a substrate of a silicon film having a silicon oxide film surrounding said silicon film in an upper portion of said substrate;
- (b) coating a silicon nitride film on the silicon oxide film on said silicon film by low pressure chemical vapor deposition;
- (c) oxidizing a surface of said silicon nitride film to form an oxide film;
- and
- (d) providing an electrode on said film,
- wherein said step (b) comprises the steps of:
- (b-1) introducing said substrate into a reaction container;
- (b-2) evacuating said reaction container;
- and
- (b-3) introducing a source gas comprising dichlorosilane and ammonia and a carrier gas into said reaction container while maintaining the pressure of gas within the reaction container to within the range of 2.00.times.10.sup.4 to 4.00.times.10.sup.4 Pa at which said silicon nitride film is prepared at a thickness ranging from about 58 .ANG. to about 48 .ANG..
Dependencies are inferred from the claim text.