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US 5,628,661 AGranted
Method for fabricating a field emission display
AssigneeSamsung Display Devices Co., Ltd.
InventorsJong-min Kim, Nam-sin Park
Life of this patent
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Abstract
A method is provided for fabricating a field emission device which can be adopted as the source for a flat panel display, an ultra-high frequency amplifier sensor, or an electron-beam-applied instrument. A polyimide layer is used as a release layer and a metal mask is formed thereon, thereby enabling the height of micro-tips to be easily controlled. Since the polyimide layer is soluble in an appropriate solvent, contamination does not occur during an etching process, thereby increasing the reliability of the device.
Claims13
A method for fabricating a field emission device comprising the steps of:
- forming cathodes on a substrate in striped patterns;
- forming an insulation layer on said substrate having striped cathodes formed thereon;
- forming gate electrodes by depositing a gate electrode layer on said insulation layer and etching said gate electrodes in a predetermined striped pattern across said cathodes;
- forming a polyimide layer on said insulation layer having said gate electrodes formed thereon;
- depositing a metal on said polyimide layer to form a metal layer;
- etching said metal layer to form openings having predetermined diameters;
- etching said polyimide layer to form holes aligned with said openings formed in said metal layer etching step;
- etching said gate electrodes to form apertures aligned with said holes formed in said polyimide layer etching step;
- etching said insulation layer to form holes aligned with said apertures formed in said gate electrodes etching step;
- forming field emitting micro-tips on said cathodes on the bottom of said holes formed in said insulation layer etching step;
- and
- lifting off said polyimide layer;
- wherein in said metal layer etching step, said metal layer is etched by a reactive ion etching (RIE) process.
10 more elements
A method for fabricating a field emission device comprising the steps of:
- forming cathodes on a substrate in striped patterns;
- forming an insulation layer on said substrate having striped cathodes formed thereon;
- forming gate electrodes by depositing a gate electrode layer on said insulation layer and etching said gate electrodes in a predetermined striped pattern across said cathodes;
- forming a polyimide layer on said insulation layer having said gate electrodes formed thereon;
- depositing a metal on said polyimide layer to form a metal layer;
- etching said metal layer to form openings having predetermined diameters;
- etching said polyimide layer to form holes aligned with said openings formed in said metal laver etching step;
- etching said gate electrodes to form apertures aligned with said holes formed in said polyimide laver etching step;
- etching said insulation layer to form holes aligned with said apertures formed in said gate electrodes etching step;
- forming field emitting micro-tips on said cathodes on the bottom of said holes formed in said insulation layer etching step;
- and
- lifting off said polyimide layer;
- wherein in said insulation layer etching step, said insulation layer is etched by a CHF.sub.3-O.sub.2 plasma.
10 more elements
A method for fabricating field emission device, said method comprising the steps of:
- forming a cathode pattern comprising a layer of conductive material on an insulation substrate;
- forming an insulation layer pattern comprising insulating material of a predetermined thickness over said cathode layer pattern;
- forming a gate electrode layer pattern, comprising a layer of conductive material on said insulation layer;
- forming a release layer pattern comprising a polymer with high temperature stability, over said gate electrode layer pattern;
- and
- forming micro-tips by depositing field emitting material over said release layer pattern;
- and
- etching said release layer pattern.
5 more elements
A method for fabricating a field emission device comprising the steps of:
- forming cathodes on a substrate in striped patterns;
- forming an insulation layer on said substrate having striped cathodes formed thereon;
- forming gate electrodes by depositing a gate electrode layer on said insulation layer and etching said gate electrodes in a predetermined striped pattern across said cathodes;
- forming a polyimide layer on said insulation layer having said gate electrodes formed thereon;
- depositing a metal on said polyimide layer to form a metal layer;
- etching said metal layer to form openings having predetermined diameters;
- etching said polyimide layer to form holes aligned with said openings formed in said metal layer etching step;
- etching said gate electrodes to form apertures aligned with said holes formed in said polyimide layer etching step;
- etching said insulation layer to form holes aligned with said apertures formed in said gate electrodes etching step;
- forming field emitting micro-tips on said cathodes on the bottom of said holes formed in said insulation layer etching step;
- and
- lifting off said polyimide layer.
9 more elements
Dependencies are inferred from the claim text.