Reference current circuit capable of preventing occurrence of a difference collector current which is caused by early voltage effect

A reference voltage circuit comprising:

• a primary pair of first and second transistors, said first transistor having a first emitter electrode grounded and a first emitter area, said second transistor having a second base electrode connected to a first collector electrode of said first transistor, a second emitter electrode grounded, and a second emitter area which is equal to e times as large as said first emitter area, where e represents the base of natural logarithm;
• a secondary pair of third and fourth transistors, said third transistor having a third base electrode connected to a second collector electrode of said second transistor, a third emitter electrode connected to a power supply terminal which is supplied with a power supply voltage, and a third emitter area which is equal to said first emitter area, said fourth transistor having a fourth base electrode connected to a third collector electrode of said third transistor, a fourth collector electrode connected to a first base electrode of said first transistor, a fourth emitter electrode connected to said power supply terminal, and a fourth emitter area which is equal to said second emitter area;
• a first resistor connected between said first collector electrode and said first base electrode;
• a second resistor connected between said second collector electrode and said second base electrode;
• a third resistor connected between said first base electrode and said fourth collector electrode;
• and
• an output voltage terminal connected to a node of said third resistor and said fourth collector electrode.

A reference voltage circuit comprising:

• a primary pair of first and second transistors, said first transistor having a first emitter electrode grounded and a first emitter area, said second transistor having a second base electrode connected to a first collector electrode of said first transistor, a second emitter electrode grounded, and a second emitter area which is equal to e times as large as said first emitter area, where e represents the base of natural logarithm;
• a secondary pair of third and fourth transistors, said third transistor having a third base electrode connected to a second collector electrode of said second transistor, a third emitter electrode connected to a power supply terminal which is supplied with a power supply voltage, and a third emitter area which is equal to said first emitter area, said fourth transistor having a fourth base electrode connected to a third collector electrode of said third transistor, a fourth collector electrode connected to a first base electrode of said first transistor, a fourth emitter electrode connected to said power supply terminal, and a fourth emitter area which is equal to said second emitter area;
• a first resistor connected between said first collector electrode and said first base electrode;
• a second resistor connected between said second collector electrode and said second base electrode;
• a third resistor connected between said first base electrode and said fourth collector electrode;
• a first output voltage terminal connected to a node of said third resistor and said fourth collector electrode;
• a fourth resistor connected between said second collector electrode and said third base electrode;
• and
• a second output voltage terminal connected to a node of said fourth resistor and said second collector electrode.

A reference current circuit comprising:

• a primary pair of first and second transistors, said first transistor having a first emitter electrode grounded and a first emitter area, said second transistor having a second base electrode connected to a first collector electrode of said first transistor, a second emitter electrode grounded, and a second emitter area which is equal to e times as large as said first emitter area, where e represents the base of natural logarithm;
• a secondary pair of third and fourth transistors, said third transistor having a third collector electrode connected to a second collector electrode of said second transistor, a third emitter electrode connected to a power supply terminal which is supplied with a power supply voltage, and a third emitter area which is equal to said first emitter area, said fourth transistor having a fourth base electrode connected to a third base electrode of said third transistor, a fourth collector electrode connected to a first base electrode of said first transistor, a fourth emitter electrode connected to said power supply terminal, and a fourth emitter area which is equal to said first emitter area;
• a resistor connected between said first collector electrode and said first base electrode;
• a fifth transistor having a fifth emitter electrode connected to said power supply terminal, a fifth base electrode connected to said third base electrode, and a fifth collector electrode connected to said fifth base electrode;
• and
• a sixth transistor having a sixth emitter electrode grounded, a sixth base electrode connected to said second collector electrode, and a sixth collector electrode connected to said fifth collector electrode.

A reference voltage circuit comprising:

• a primary pair of first and second transistors, said first transistor having a first emitter electrode grounded and a first emitter area, said second transistor having a second base electrode connected to a first collector electrode of said first transistor, a second emitter electrode grounded, and a second emitter area which is equal to e times as large as said first emitter area, where e represents the base of natural logarithm;
• a secondary pair of third and fourth transistors, said third transistor having a third emitter electrode connected to a power supply terminal which is supplied with a power supply voltage, and a third emitter area which is equal to said first emitter area, said fourth transistor having a fourth base electrode connected to a third base electrode of said third transistor, a fourth emitter electrode connected to said power supply terminal, and a fourth emitter area which is equal to said first emitter area;
• a first resistor connected between said first collector electrode and said first base electrode;
• a second resistor connected between said first base electrode and a fourth collector electrode of said fourth transistor, said second resistor having a primary resistance value;
• a third resistor connected between a second collector electrode of said second transistor and a third collector electrode of said third transistor, said third resistor having a secondary resistance value which is equal to said primary resistance value;
• a fifth transistor having a fifth emitter electrode connected to said power supply terminal, a fifth base electrode connected to said third base electrode, and a fifth collector electrode connected to said fifth base electrode;
• and
• a sixth transistor having a sixth emitter electrode grounded, a sixth base electrode connected to said second collector electrode, and a sixth collector electrode connected to said fifth collector electrode.

A reference voltage circuit comprising:

• a primary pair of first and second transistors, said first transistor having a first emitter electrode grounded and a first emitter area, said second transistor having a second base electrode connected to a first base electrode of said first transistor, and a second emitter area which is equal to e times as large as said first emitter area, where e represents the base of natural logarithm;
• a secondary pair of third and fourth transistors, said third transistor having a third collector electrode connected to a second collector electrode of said second transistor, a third emitter electrode connected to a power supply terminal which is supplied with a power supply voltage, and a third emitter area which is equal to said first emitter area, said fourth transistor having a fourth base electrode connected to a third base electrode of said third transistor, a fourth collector electrode connected to said third and said fourth base electrodes and a first collector electrode of said first transistor, a fourth emitter electrode connected to said power supply terminal, and a fourth emitter area which is equal to said first emitter area;
• a first resistor connected between said first emitter electrode and ground,
• a fifth transistor having a fifth base electrode connected to said third collector electrode, a fifth emitter electrode connected to said power supply terminal, and a fifth emitter area which is equal to two times as large as said first emitter area;
• a sixth transistor having a sixth base electrode connected to said second base electrode, a sixth collector electrode connected to said sixth base electrode, a sixth emitter electrode grounded, and a sixth emitter area which is equal to said fifth emitter area;
• a second resistor connected between a fifth collector electrode of said fifth transistor and said sixth collector electrode of said sixth transistor;
• and
• an output voltage terminal connected to a node of said fifth collector electrode and said second collector electrode.

A reference current circuit comprising:

• a primary pair of first and second MOS transistors, said first MOS transistor having a first source electrode grounded and a first transconductance, said second MOS transistor having a second gate electrode connected to a first drain electrode of said first MOS transistor, a second source electrode grounded, and a second transconductance which is equal to four times as large as said first transconductance;
• a secondary pair of third and fourth MOS transistors, said third MOS transistor having a third gate electrode connected to a second drain electrode of said second MOS transistor, a third source electrode connected to a power supply terminal which is supplied with a power supply voltage, and a third transconductance which is equal to said first transconductance, said fourth MOS transistor having a fourth gate electrode connected to a third drain electrode of said third MOS transistor, a fourth electrode connected to a first gate electrode of said first MOS transistor, a fourth source electrode connected to said power supply terminal, and a fourth transconductance which is equal to said second transconductance;
• a first resistor connected between said first drain electrode and said first gate electrode;
• and
• a second resistor connected between said second drain electrode and said second gate electrode.

A reference voltage circuit comprising:

• a primary pair of first and second MOS transistors, said first MOS transistor having a first source electrode grounded and a first transconductance, said second MOS transistor having a second gate electrode connected to a first drain electrode of said first MOS transistor, a second source electrode grounded, and a second transconductance which is equal to four times as large as said first transconductance;
• a secondary pair of third and fourth MOS transistors, said third MOS transistor having a third gate electrode connected to a second drain electrode of said second MOS transistor, a third source electrode connected to a power supply terminal which is supplied with a power supply voltage, and a third transconductance which is equal to said first transconductance, said fourth MOS transistor having a fourth gate electrode connected to a third drain electrode of said third MOS transistor, a fourth drain electrode connected to a first gate electrode of said first MOS transistor, a fourth source electrode connected to said power supply terminal, and a fourth transconductance which is equal to said second transconductance;
• a first resistor connected between said first drain electrode and said first gate electrode;
• a second resistor connected between said second drain electrode and said second gate electrode;
• a third resistor connected between said first gate electrode and said fourth drain electrode;
• and
• an output voltage terminal connected to a node of said third resistor and said fourth drain electrode.

A reference voltage circuit comprising:

• a primary pair of first and second MOS transistors, said first MOS transistor having a first source electrode grounded and a first transconductance, said second MOS transistor having a second gate electrode connected to a first drain electrode of said first MOS transistor, a second source electrode grounded, and a second transconductance which is equal to four times as large as said first transconductance;
• a secondary pair of third and fourth MOS transistors, said third transistor having a third gate electrode connected to a second drain electrode of said second MOS transistor, a third source electrode connected to a power supply terminal which is supplied with a power supply voltage, and a third transconductance which is equal to said first transconductance, said fourth MOS transistor having a fourth gate electrode connected to a third drain electrode of said third MOS transistor, a fourth drain electrode connected to a first gate electrode of said first MOS transistor, a fourth source electrode connected to said power supply terminal, and a fourth transconductance which is equal to said second transconductance;
• a first resistor connected between said first drain electrode and said first gate electrode;
• a second resistor connected between said second drain electrode and said second gate electrode;
• a third resistor connected between said first gate electrode and said fourth drain electrode;
• a first output voltage terminal connected to a node of said third resistor and said fourth drain electrode;
• a fourth resistor connected between said second drain electrode and said third gate electrode;
• and
• a second output voltage terminal connected to a node of said fourth resistor and said second drain electrode.

A reference current circuit comprising:

• a primary pair of first and second MOS transistors, said first MOS transistor having a first source electrode grounded and a first transconductance, said second MOS transistor having a second gate electrode connected to a first drain electrode of said first MOS transistor, a second gate electrode grounded, and a second transconductance which is equal to four times as large as said first transconductance;
• a secondary pair of third and fourth MOS transistors, said third MOS transistor having a third drain electrode connected to a second drain electrode of said second MOS transistor, a third source electrode connected to a power supply terminal which is supplied with a power supply voltage, and a third transconductance which is equal to said first transconductance, said fourth MOS transistor having a fourth gate electrode connected to a third gate electrode of said third MOS transistor, a fourth drain electrode connected to a first gate electrode of said first MOS transistor, a fourth source electrode connected to said power supply terminal, and a fourth transconductance which is equal to said first transconductance;
• a resistor connected between said first drain electrode and said first gate electrode;
• a fifth MOS transistor having a fifth source electrode connected to said power supply terminal, a fifth gate electrode connected to said third gate electrode, and a fifth drain electrode connected to said fifth gate electrode;
• and
• a sixth MOS transistor having a sixth source electrode grounded, a sixth gate electrode connected to said second drain electrode, and a sixth drain electrode connected to said fifth drain electrode.

A reference voltage circuit comprising:

• a primary pair of first and second MOS transistors, said first MOS transistor having a first source electrode grounded and a first transconductance, said second MOS transistor having a second gate electrode connected to a first drain electrode of said first MOS transistor, a second source electrode grounded, and a second transconductance which is equal to four times as large as said first transconductance;
• a secondary pair of third and fourth MOS transistors, said third MOS transistor having a third source electrode connected to a power supply terminal which is supplied with a power supply voltage, and a third transconductance which is equal to said first transconductance, said fourth MOS transistor having a fourth gate electrode connected to a third gate electrode of said third MOS transistor, a fourth source electrode connected to said power supply terminal, and a fourth transconductance which is equal to said first transconductance;
• a first resistor connected between said first drain electrode and said first base electrode;
• a second resistor connected between said first gate electrode and a fourth drain electrode of said fourth MOS transistor, said second resistor having a primary resistance value;
• a third resistor connected between a second drain electrode of said second MOS transistor and a third drain electrode of said third MOS transistor, said third resistor having a secondary resistance value which is equal to said primary resistance value;
• a fifth MOS transistor having a fifth source electrode connected to said power supply terminal, a fifth gate electrode connected to said third gate electrode, and a fifth drain electrode connected to said fifth gate electrode;
• and
• a sixth MOS transistor having a sixth source electrode grounded, a sixth gate electrode connected to said second drain electrode, and a sixth drain electrode connected to said fifth drain electrode.

A reference voltage circuit comprising:

• a primary pair of first and second MOS transistors, said first MOS transistor having a first source electrode grounded and a first transconductance, said second MOS transistor having a second gate electrode connected to a first gate electrode of said first MOS transistor, and a second transconductance which is equal to four times as large as said first transconductance;
• a secondary pair of third and fourth MOS transistors, said third MOS transistor having a third drain electrode connected to a second drain electrode of said second MOS transistor, a third source electrode connected to a power supply terminal which is supplied with a power supply voltage, and a third transconductance which is equal to said first transconductance, said fourth MOS transistor having a fourth gate electrode connected to a third gate electrode of said third MOS transistor, a fourth drain electrode connected to said third and said fourth gate electrodes and a first drain electrode of said first MOS transistor, a fourth source electrode connected to said power supply terminal, and a fourth transconductance which is equal to said first transconductance;
• a first resistor connected between said first source electrode and ground;
• a fifth MOS transistor having a fifth gate electrode connected to said third drain electrode, a fifth source electrode connected to said power supply terminal, and a fifth transconductance which is equal to two times as large as said first transconductance;
• a sixth MOS transistor having a sixth gate electrode connected to said second gate electrode, a sixth drain electrode connected to said sixth gate electrode, a sixth source electrode grounded, and a sixth transconductance which is equal to said fifth transconductance;
• a second resistor connected between a fifth drain electrode of said fifth MOS transistor and said sixth drain electrode of said sixth MOS transistor;
• and
• an output voltage terminal connected to a node of said fifth drain electrode and said second drain electrode.