Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate;
• a semiconductor layer disposed on said semiconductor substrate;
• a first element formed in a first region of said semiconductor layer, an outer surface of said first element including side walls and a bottom;
• a second element formed in a second region of said semiconductor layer, an outer surface of said second element including side walls and a bottom;
• and
• first and second insulating layers surrounding said outer surface of said first element and said second element respectively, to electrically insulate and separate said first element from said second element and from said semiconductor substrate;
• a first electrical shield layer disposed between said first insulating layer and said first element, said first electrical shield layer surrounding said outer surface of said first element, said first electrical shield layer being biasable to a first reference electric potential applied thereto, said first electrical shield layer shielding said first element from an electrical fluctuation of said semiconductor substrate caused by an element other than said first element;
• a second electrical shield layer disposed between said second insulating layer and said second element, said second electrical shield layer being biasable to a second reference electric potential applied thereto;
• a first electrode connection portion of said first electrical shield layer formed by an enlarged portion of said first electrical shield layer;
• a second electrode connection portion of said second electrical shield layer formed by an enlarged portion of said second electrical shield layer;
• a first electrode, connected to said first electrode connection portion of said first electrical shield layer, for receiving and applying said first reference electric potential to said first electrical shield layer;
• and
• a second electrode, connected to said second electrode connection portion of said second electrical shield layer, for receiving and applying said second reference electric potential to said second electrical shield layer;
• whereby said first electrical shield layer and said second electrical shield layer are capable of being biased simultaneously at different reference electric potentials.