Semiconductor acceleration sensor with source and drain regions

A semiconductor acceleration sensor, comprising:

• a semiconductor substrate;
• a movable section supported by two beam structures and disposed above said semiconductor substrate;
• a gate electrode section having a belt configuration disposed on said movable section above said semiconductor substrate with a predetermined gap interposed therebetween, said gate electrode extending in a direction at a right angle with respect to an acceleration detection direction which is parallel to a surface of said semiconductor substrate;
• first source and drain regions aligned in a right-angle direction with respect to said acceleration detection direction on said semiconductor substrate below said gate electrode section, each being defined by an impurity diffusion region extending in said acceleration detection direction, wherein a characteristic of current flowing therethrough changes as a result of displacement of said gate electrode section in said acceleration detection direction;
• and
• second source and drain regions aligned in said right-angle direction with respect to said acceleration detection direction on said semiconductor substrate below said gate electrode section, each being defined by an impurity diffusion region extending in said acceleration detection direction, wherein current flowing therethrough changes in reverse phase with respect to said current flowing between said first source and drain regions as a result displacement of said gate electrode section in said acceleration detection direction.

A semiconductor acceleration sensor, comprising:

• a semiconductor substrate;
• a movable section doubly supported by two beam structures and disposed above said semiconductor substrate;
• first and second movable gate electrode sections disposed at edge portions of a gouged section defined in said movable section, wherein said edge portions of said gouged section mutually oppose one another and lie in a direction parallel to an acceleration detection, which is a direction parallel to a surface of said semiconductor substrate;
• first source and drain regions aligned in a right-angle direction with respect to said acceleration detection direction on said semiconductor substrate below said first movable gate electrode section, each being defined by an impurity diffusion region extending in said acceleration detection direction, wherein a characteristic of current flowing therethrough changes as a result of displacement of said first movable gate electrode section in said acceleration detection direction;
• and
• second source and drain regions aligned in a right-angle direction with respect to said acceleration detection direction on said semiconductor substrate below said second movable gate electrode section, each being defined by an impurity diffusion region extending in said acceleration detection direction, wherein current flowing therethrough changes in a reverse phase with respect to said current flowing through said first source and drain regions as a result of displacement of said second movable gate electrode section in said acceleration detection direction.

A semiconductor acceleration sensor, comprising:

• a semiconductor substrate;
• a gate electrode section supported above said semiconductor substrate by means of a doubly supported type beam section with a predetermined gap interposed therebetween;
• and
• source and drain regions each formed of an impurity diffusion region on said semiconductor substrate, aligned in a direction at a right angle to an acceleration detection direction parallel to a surface of said semiconductor substrate, said source and said drains regions being disposed relative to one another such that a distance between said source and drain regions changes in said acceleration detection direction, whereby current flowing between said source and drain regions changes as a result of displacement of said gate electrode section along said acceleration detection direction.

A semiconductor acceleration sensor, comprising:

• a semiconductor substrate;
• a doubly supported type beam section disposed above said semiconductor substrate;
• first and second gate electrode sections protruding respectively from both sides of said doubly supported type beam section above said semiconductor substrate with a predetermined gap interposed therebetween wherein, distances of said first and second gate electrodes from said semiconductor substrate vary in mutually reverse phase in response to a first acceleration applied in a direction perpendicular to a surface of said semiconductor substrate;
• first source and drain regions each defined by an impurity diffusion region extending in an acceleration detection direction which is parallel to a surface of said substrate, wherein a characteristic of current flowing therethrough changes as a result of a change in distance from said first gate electrode section by means of a second acceleration;
• and
• second source and drain regions each detected by an impurity diffusion region extending in said second acceleration detection direction, wherein a characteristic of current flowing therethrough changes as a result of a change in distance from said second gate electrode section by means of said second acceleration.