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US 5,627,139 AGranted
High-temperature superconducting josephson devices having a barrier layer of a doped, cubic crystalline, conductive oxide material
AssigneeThe Regents of the University of California
InventorsDavid K. Chin, Theodore Van Duzer
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Abstract
A HTSC Josephson device wherein the barrier layer is a cubic, conductive material.
Claims20
A structure comprising:
- first and second layers each including a high-temperature superconducting material including a copper oxide and having a critical temperature greater than 25 K;
- and
- a third layer connecting said first and second layers, said third layer including a conductive material having a cubic crystal structure which is lattice matched to said first and second electrodes;
- and wherein
- at least a portion of said third layer is underneath an epitaxial portion of said first layer;
- and
- a separation of said first and second layers is appropriate to produce a Josephson effect.
4 more elements
A Josephson device comprising:
- first and second electrodes each including a high-temperature superconducting material including a copper oxide and having a critical temperature greater than 25 K;
- and
- a barrier connecting said first and second electrodes, said barrier including a conductive material having a cubic crystal structure which is lattice matched to said first and second electrodes;
- and wherein
- at least a portion of said barrier is underneath an epitaxial portion of said first electrode;
- and
- a separation of said first and second electrodes is appropriate to produce a Josephson effect.
4 more elements
Dependencies are inferred from the claim text.