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US 5,627,111 AGranted
Electron emitting device and process for producing the same
AssigneeCanon Kabushiki Kaisha
InventorsTakeo Tsukamoto, Akira Shimizu, Akira Suzuki, Masao Sugata, Isamu Shimoda, Masahiko Okunuki
Life of this patent
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Abstract
An electron emitting device causes electron emission by a current supply in a coarse resistor film. The coarse thin resistor film is composed at least of a coarse thin silicon film.
Claims6
A process for producing an electron emitting device provided with a resistor film composed at least of a crystalline silicon film, comprising the steps of:
- forming, on a silicon layer, an aluminum layer thicker than said silicon layer;
- effecting a heat treatment to cause silicon in said silicon layer to crystallize locally in said aluminum layer;
- and
- eliminating aluminum in said aluminum layer, thereby forming said crystalline silicon film.
1 more element
Dependencies are inferred from the claim text.