Method of manufacturing a semiconductor device that uses a sapphire substrate

A method of manufacturing a semiconductor device comprising the steps of:

• utilizing a sapphire as a wafer;
• forming at least one semiconductor layer on a crystal surface "a" {1120} of said sapphire wafer;
• fixing boundaries so as to define chips by use of two directional lines on said sapphire wafer, each said directional line crossing an axis "c" (0001) and making an angle that ranges from 20 to 70 degrees to said axis "c" (0001);
• forming scribe lines by use of a scriber along said two directional lines;
• and
• breaking said sapphire wafer along said scribe lines by applying external energy thereto.

A method of manufacturing a semiconductor device comprising the steps of:

• utilizing a sapphire as a wafer;
• forming at least one semiconductor layer on a crystal surface "a" {1120} of said sapphire wafer;
• fixing boundaries so as to define chips by use of two directional lines on said sapphire wafer, each said directional line crossing an axis "c" (0001) and making an angle that ranges from 30 to 60 degrees to said axis "c" (0001);
• forming scribe lines by use of a scriber along said two directional lines;
• and
• breaking said sapphire wafer along said scribe lines by applying external energy thereto.

A method of manufacturing a semiconductor device comprising the steps of:

• utilizing a sapphire as a wafer, wherein said sapphire wafer has a thickness in the range of 60 to 120 .mu.m;
• forming at least one semiconductor layer on a crystal surface "a" {1120} of said sapphire wafer;
• fixing boundaries so as to define chips by use of two directional lines on said sapphire wafer, each said directional line crossing an axis "c" (0001) and making an angle of less than 90 degrees to said axis "c" (0001);
• forming scribe lines by use of a scriber along said two directional lines;
• and
• breaking said sapphire wafer along said scribe lines by applying external energy thereto.

A method of manufacturing a semiconductor device comprising the steps of:

• utilizing a sapphire as a wafer, wherein said sapphire wafer has a thickness in the range of 80 to 100 .mu.m;
• forming at least one semiconductor layer on a crystal surface "a" {1120} of said sapphire wafer;
• fixing boundaries so as to define chips by use of two directional lines on said sapphire wafer, each said directional line crossing an axis "c" (0001) and making an angle of less than 90 degrees to said axis "c" (0001);
• forming scribe lines by use of a scriber along said two directional lines;
• and
• breaking said sapphire wafer along said scribe lines by applying external energy thereto.

A method of manufacturing a semiconductor device comprising the steps of:

• utilizing sapphire as a wafer;
• forming at least one semiconductor layer on a crystal surface "a" {1120} of said sapphire wafer;
• fixing boundaries on said sapphire wafer so as to define chips by use of a plurality of first directional lines and a plurality of second directional lines, each said first directional line being parallel to another said first directional line, crossing an axis "c" (0001), and making an angle of less than 90 degrees to said axis "c" (0001), and each said second directional line being parallel to another said second directional line, crossing said axis "c" (0001), and making an angle of less than 90 degrees to said axis "c" (0001);
• forming scribe lines by use of a scriber along at least two of said plurality of first directional lines and along at least two of said plurality of second directional lines;
• and
• breaking said sapphire wafer along said scribe lines by applying external energy thereto.