Semiconductor devices encapsulated with aluminum nitride-filled resins and process for preparing same
AssigneeThe Dow Chemical Company
InventorKevin E. Howard
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Abstract
Semiconductor devices are encapsulated in a thermosetting resin filled with aluminum nitride particles. The aluminum nitride particles have an outer layer of Al-O-N, into which is incorporated amorphous Si-O, which renders them hydrolyrically stable. The aluminum nitride particles impart very high thermal conductivity to the cured resin. In addition, the cured resin has a CTE similar to that of the encapsulated semiconductor device, and has excellent dielectric properties.
Claims6
In a semiconductor encapsulating process wherein a normally solid, heat softened, uncured thermosetting resin is injected into a mold cavity using a resin transfer molding apparatus which contains a semiconductor semiconductor device in electrical connection with a plurality of leads, and said thermosetting resin is subsequently cured to form an encapsulated semiconductor device having leads extending through the cured encapsulating resin, the improvement wherein:
- (a) the thermosetting resin is filled with from about 1 to about 90 weight %, based on the combined weight of the resin and aluminum nitride particles, of aluminum nitride particles which have an outer layer which renders the particles hydrolyrically stable, and
- (b) no separate preheating of said filled thermosetting resin is performed outside of the resin transfer molding apparatus.
Dependencies are inferred from the claim text.