Back to results
US 5,627,090 AGranted
Semiconductor element and process for production for the same
AssigneeMurata Manufacturing Co., Ltd.
InventorsTakashi Marukawa, Hiroyuki Nakano
Life of this patent
Estimating the term…
Abstract
There is provided a semiconductor element having a Schottky electrode which forms a Schottky junction with an active layer formed on a compound semiconductor substrate characterized in that a modified layer is formed in at least a portion of a region of the active layer on which region the Schottky electrode is formed and a vicinity of that region.
Claims16
A process for the production of a semiconductor element comprising the steps of:
- forming an active layer on a compound semiconductor substrate;
- forming a modified layer in the active layer by treating at least a portion of a region on which the Schottky electrode is to be formed and a vicinity region of said region with plasma, the modified layer having a lower carrier concentration than that of the active layer;
- and
- forming a Schottky electrode which forms a Schottky junction with the active layer such that the Schottky electrode is at least partially in contact with or adjacent to the modified layer.
1 more element
A process for the production of a semiconductor element comprising the steps of:
- forming an active layer on a compound semiconductor substrate;
- forming a modified layer in the active layer by treating at least a portion of a region on which the Schottky electrode is to be formed and a vicinity region of said region with plasma which is generated using at least one gas selected from the group consisting of O.sub.2, N.sub.2, Ar, and H.sub.2 ;
- and
- forming a Schottky electrode which forms a Schottky junction with the active layer such that the Schottky electrode is at least partially in contact with or adjacent to the modified layer.
1 more element
A process for the production of a semiconductor element comprising the steps of:
- forming an active layer on a compound semiconductor substrate;
- forming a modified layer in the active layer by treating at least a portion of a region on which the Schottky electrode is to be formed and a vicinity region of said region with plasma which is generated using a gas including O.sub.2,
- removing an oxide layer formed on a surface of the modified layer by an etching method;
- and
- forming a Schottky electrode which forms a Schottky junction with the active layer such that the Schottky electrode is at least partially in contact with or adjacent to the modified layer.
2 more elements
Dependencies are inferred from the claim text.