Method of making a device having a TFT and a capacitor

A method of producing a device having a thin film transistor and a capacitor comprising steps of:

• forming, on a substrate, a first and a second conductive layer;
• depositing, over the conductive layers, a first insulating layer, a semiconductor layer and a second insulating layer, in sequence, in this order;
• fabricating the capacitor having the second conductive layer, a part of the first insulating layer, a part of the semiconductor layer, a part of the second insulating layer and a third conductive layer;
• and
• fabricating the transistor comprising the steps of:
• selectively removing the second insulating layer in an area in which source and drain are to be formed;
• depositing a doped semiconductor layer on the second insulating layer remaining on a channel and on the semiconductor layer exposed through the second insulating layer;
• and
• selectively removing the doped semiconductor layer on the second insulating layer remaining on the channel,
• wherein both of the first and second insulating layers are made of silicon nitride formed by a glow discharge process.