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US 5,627,086 AGranted
Method of forming thin-film single crystal for semiconductor
AssigneeSony Corporation
InventorTakashi Noguchi
Life of this patent
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Abstract
A thin-film semiconductor crystal is formed by depositing a thin film of amorphous silicon on a substrate, introducing ions selectively into a predetermined region of the thin film of amorphous silicon, and growing a single semiconductor crystal in the thin film of amorphous silicon by way of solid-phase crystal growth. A semiconductor device which employs the thin-film semiconductor crystal has a channel in the region where the ions are selectively introduced.
Claims6
A method of growing a thin-film semiconductor crystal comprising the steps of:
- depositing a thin film of amorphous silicon on a substrate;
- covering a plurality of separate first regions of the amorphous silicon with a mask;
- introducing ions selectively into a plurality of separate second regions on said thin film of amorphous silicon, said amorphous silicon being substantially free of implanted ions prior to said step of introducing ions selectively;
- and
- growing a large crystal grain in each of said plurality of separate first regions of said thin film of amorphous silicon by solid-phase crystal growth and such that grain boundaries are formed in each of said plurality of separate second regions;
- forming an alignment mark prior to forming said large crystal grains;
- separating said separate first regions by removing said plurality of separate second regions containing said grain boundaries using the alignment mark as a reference;
- and forming a device in each first region.
5 more elements
Dependencies are inferred from the claim text.