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AssigneeCiba-Geigy Corporation
InventorsNorbert Munzel, Reinhard Schulz, Heinz Holzwarth, Stephan Ilg
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The invention relates to the use of oxime sulfonates of formula 1 ##STR1## wherein R is naphthyl, ##STR2## Ar is an unsubstituted aryl group or an aryl group which carries one or more than one substituent selected from the group consisting of nitro, chloro, bromo, hydroxyl, C.sub.1 -C.sub.4 alkyl, C.sub.1 -C.sub.4 perfluoroalkyl, C.sub.1 -C.sub.4 alkoxy and acid degradable substituents; R.sub.0 is either a R.sub.1 --X group or R.sub.2 ; X is an oxygen or a sulfur atom; R.sub.1 is hydrogen, C.sub.1 -C.sub.4 alkyl or unsubstituted phenyl or phenyl which is substituted by a member selected from the group consisting of chloro, bromo, C.sub.1 -C.sub.4 alkyl and C.sub.1 -C.sub.4 alkoxy, and R.sub.2 is hydrogen, C.sub.1 -C.sub.4 alkyl or an acid-degradable substituent, as radiation-sensitive photoacid generator in a chemically amplified photoresist which is developable in alkaline medium and is sensitive to radiation of a wavelength in the range from 340-390 nm, and to corresponding positive-working and negative-working photoresists for the cited wavelength range.
A chemically amplified, negative-working photoresist composition containing at least one film-forming phenolic resin binder, which is developable in conventional aqueous-alkaline developers of resist technology and is based on an oxime sulfonate as radiation-sensitive photoacid generator, which photoresist composition contains as oxime sulfonate a compound of formula (1) in an amount effective to render the negative-working photoresist composition sensitive to radiation of a wavelength in the range from 340 to 390 nanometers:
A chemically amplified, negative-working photoresist composition containing at least one film-forming phenolic resin binder which is developable in alkaline medium and is based on an oxime sulfonate as radiation-sensitive photoacid generator, which photoresist composition contains as oxime sulfonate a compound of formula (1) in an amount effective to render the negative-working photoresist composition sensitive to radiation of a wavelength in the range from 340 to 390 nanometers:
Dependencies are inferred from the claim text.