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US 5,626,921 AGranted
Method for forming photoluminescence layer on a semiconductor layer by ion irradiation
AssigneeNEC Corporation
InventorYukinori Ochiai
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Abstract
For forming a photoluminescence layer on a semiconductor layer, ions are irradiated to a surface portion of a semiconductor layer where a photoluminescence layer is to be formed, and then, the semiconductor layer is immersed in a solution containing hydrofluoric acid, whereby the ion-irradiated and hydrofluoric-acid-treated portion forms a photoluminescence layer.
Claims5
A method for forming a photoluminescence layer on a substrate having a silicon surface portion, said photoluminescence layer emitting light at an intensity and a wavelength, by performing the steps of
- irradiating with ions said surface portion where the photo luminescence layer is to be formed;
- immersing said surface portion in a solution containing hydrofluoric acid;
- and
- controlling at least one of a solution concentration and an immersion time in said solution in order to control said intensity and said wavelength;
- whereby the ion-irradiated and hydrofluoric acid-treated surface portion forms the photoluminescence layer.
2 more elements
Dependencies are inferred from the claim text.