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US 5,626,728 AGranted
Piezoelectric lead zirconium titanate device and method for forming same
AssigneeMotorola, Inc.
InventorsEd S. Ramakrishnan, Wei-Yean Howng
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AssigneeMotorola, Inc.
InventorsEd S. Ramakrishnan, Wei-Yean Howng
Estimating the term…
A piezoelectric device, such as a surface acoustic wave filter, comprises a piezoelectric film composed of a lead zirconium titanate compound applied to a substrate formed of silicon or gallium arsenide. The device includes an intermediate film between the piezoelectric film and the substrate and composed of a lead-free zirconium titanate compound to prevent interaction between lead oxide in the piezoelectric material and the material of the substrate that would otherwise cause spilling or adversely effect the electrical properties of the substrate. The piezoelectric device is made by first applying the film of the lead-free zirconium titanate compound and thereafter applying the film of the lead zirconium titanate compound. Preferably, the lead-free zirconium titanate film is applied by sputtering and annealed to densify the material and increase the dielectric constant prior to depositing the piezoelectric material.
A method for coating a piezoelectric film onto a substrate selected from the group consisting of silicon and gallium arsenide, said method comprising
A method for coating a piezoelectric film onto a silicon substrate, said method comprising
Dependencies are inferred from the claim text.