Sputtering apparatus and method
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsHitoshi Yamanishi, Isamu Aokura, Masahide Yokoyama, Takahiro Takisawa
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Abstract
A sputtering apparatus uses a plurality of rectangular targets to form a thin film on a substrate, and includes a plurality of magnets disposed along both side edges of each target in such a manner that the polarities of adjacent magnets along the side edges of the targets are opposite, and polarities of the magnets confronting each other across the targets are opposite. The surfaces of at least two targets are inclined to a surface of the substrate at an angle not smaller than 30.degree. and not larger than 60.degree..
Claims21
A sputtering apparatus using a plurality of rectangular targets to form a thin film on a substrate, comprising:
- a plurality of magnets disposed along both side edges of each target in such a manner that the polarities of adjacent magnets along the side edges of the target are opposite, and the polarities of the magnets confronting each other across the target are opposite, the surfaces of at least two said targets being inclined to a surface of said substrate at an angle not smaller than 30.degree. and not larger than 60.degree..
A sputtering method using a sputtering apparatus including a plurality of rectangular targets to form a thin film on a substrate, the apparatus comprising a plurality of magnets disposed along both side edges of each target in such a manner that the polarities of adjacent magnets along the side edges of the target are opposite, and the polarities of the magnets confronting each other across the target are opposite, the surfaces of at least two targets being inclined to a surface of said substrate,
- said method comprising steps of:
- supplying sputtering power to the targets;
- forming magnetic fields by the magnets in such a manner that magnetic fluxes are present in both directions over an entire surface of the target;
- and
- applying magnetic forces to the plasma ions from the magnetic field in different directions, so that the ions are nearly uniformly distributed all over the surface of the target to perform sputtering thereof.
Dependencies are inferred from the claim text.