Process of fabricating a semiconductor device in which one portion of an amorphous silicon film is thermally crystallized and another portion is laser crystallized

A method of manufacturing a semiconductor device comprising the steps of:

• forming an amorphous silicon film on a substrate having a first region and a second region;
• selectively disposing a material containing a metal or metal silicide thereof, wherein said metal is selected from the group consisting of nickel, iron, cobalt and platinum, in contact with a portion of said amorphous silicon film located on said first region of the substrate;
• applying heat energy to said substrate to crystallize only a first portion of said amorphous silicon film located on said first region of the substrate and provided with said material;
• applying light energy to only a second portion of the amorphous silicon film located on said second region of the substrate to crystallize said second portion to a different degree of crystallization than said first portion;
• and
• forming at least one electronic device utilizing said portion of said silicon film located on said first region of the substrate and at least one electronic device utilizing said silicon film located on said second region of the substrate.

A method of manufacturing a semiconductor device comprising the steps of:

• forming an amorphous silicon film on a substrate having a first region and a second region;
• selectively disposing a material containing a metal or metal silicide thereof, wherein said metal is selected from the group consisting of nickel, iron, cobalt and platinum, in contact with a portion of said amorphous silicon film located on said first region of the substrate;
• applying heat energy to said substrate to crystallize only a first portion of said amorphous silicon film located on said first region of the substrate and provided with said material;
• applying light energy to said substrate in order to increase a crystallinity of at least a second portion of said silicon film located on said second region of the substrate;
• and
• forming at least one electronic device utilizing said portion of said silicon film located on said first region of the substrate and at least one electronic device utilizing said silicon film located on said second region of the substrate.