Mask for transferring a pattern for use in a semiconductor device and method of manufacturing the same
AssigneesMitsubishi Denki Kabushiki Kaisha, Ryoden Semiconductor Systems Engineering Corporation
InventorsHirofumi Sakata, Tadashi Nishioka
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Abstract
A mask for transferring a pattern in which durability can be improved and a very fine circuit pattern of a light-shielding film can be formed, and a manufacturing method thereof are obtained. In the mask for transferring a pattern, a silicon monocrystalline film 2, an aluminum monocrystalline film 3 and an aluminum oxide film 4 are formed on a mask substrate 1 so as to have a prescribed pattern feature. Silicon monocrystalline film 2 and aluminum monocrystalline film 3 serve as the light-shielding film. Aluminum oxide film 4 serves as an anti reflection and protection film.
Claims6
A mask for transferring a pattern comprising:
- a transparent substrate having a main surface;
- a semiconductor monocrystalline film formed with a pattern feature on the main surface of said transparent substrate;
- a metal monocrystalline film formed on said semiconductor monocrystalline film;
- and
- a metal oxide anti-reflection film, having a thickness in the range of 50 to 100 nm, formed on said metal monocrystalline film.
A mask for transferring a pattern, comprising:
- a transparent substrate having a main surface;
- an alloy solid solution film of a solid solution of semiconductor single crystal and metal single crystal formed with a pattern feature on the main surface of said transparent substrate;
- and
- a metal oxide anti-reflection film formed on said alloy solid solution film.
Dependencies are inferred from the claim text.