Method of making light valve device using semiconductive composite substrate

A process for manufacturing a semiconductor device, comprising:

• depositing a layer of silicon dioxide on a surface of a first substrate;
• thermally bonding a second substrate of single crystal silicon on the silicon dioxide layer;
• subjecting the second substrate to processing to form a single crystal semiconductor thin film;
• forming a semiconductor integrated circuit in the single crystal semiconductor thin film;
• depositing an adhesive on a surface of the semiconductor integrated circuit and solidifying the adhesive to form a support substrate having a single-layer structure;
• removing the first substrate to expose a surface of the silicon dioxide layer;
• and subjecting the exposed surface of the silicon dioxide layer to a treatment including at least forming an electrode.

A process for manufacturing a semiconductor device, comprising:

• depositing a layer of silicon nitride on a surface of a first substrate;
• depositing a layer of silicon dioxide on the silicon nitride layer;
• thermally bonding a second substrate of single crystal silicon on the silicon dioxide layer;
• subjecting the second substrate to processing to form a single crystal semiconductor thin film;
• forming a semiconductor integrated circuit in the single crystal semiconductor thin film;
• fixedly adhering a support substrate in face-to-face relation to a surface of the semiconductor integrated circuit opposite the first substrate;
• etching the first substrate using the silicon nitride layer as an etch stopper to expose a surface of the silicon dioxide layer;
• and subjecting the exposed surface of the silicon dioxide layer to a treatment including at least forming an electrode.