Back to results
US 5,616,515 AGranted
Silicon oxide germanium resonant tunneling
AssigneeTexas Instruments Incorporated
InventorYasutoshi Okuno
Life of this patent
Estimating the term…
Abstract
A resonant tunneling diode (400) made of a germanium quantum well (406) with silicon oxide tunneling barriers (404, 408). The silicon oxide tunneling barriers (404, 408) plus germanium quantum well (406) may be fabricated by oxygen segregation from germanium oxides to silicon oxides.
Claims6
A method of fabrication of a silicon dioxide layer, comprising the steps of:
- (a) providing a germanium layer on a first silicon layer and a second silicon layer on said germanium layer;
- (b) at least partially oxidizing said germanium layer and said second silicon layer without oxidizing said first silicon layer;
- and
- (c) migrating oxygen from said germanium layer to oxidize said first silicon layer and thereby form a silicon dioxide layer.
1 more element
A method of fabrication of a quantum well with abutting tunneling barrier, comprising the steps of:
- (a) providing a quantum-well precursor material on a tunneling-barrier precursor material, wherein said quantum-well precursor material contains quantum well material plus a segregatable material;
- and
- (b) segregating said segregatable material from said quantum-well precursor material into said tunneling-barrier precursor material, whereby said segregatable material and said tunneling-barrier precursor material combine to form a tunneling barrier.
Dependencies are inferred from the claim text.