Method and apparatus for controlling temperature in rapid heat treatment system

The rapid heat treatment apparatus for rapidly heating semiconductor wafer comprising:

• a process tube, made of a non-metallic material, having a lower opening through which a semiconductor wafer boat is inserted;
• a manifold unit air-tightly connected via a sealed portion to said lower opening of the process tube, having a gas inlet portion, and made of aluminum or an aluminum alloy;
• a supply source for supplying a gas into said process tube through said gas inlet portion;
• a section for exhausting gas out of the process tube;
• heating means arranged around said manifold unit for heating the manifold unit;
• temperature control means for measuring a temperature of the manifold unit, controlling the operation of said heating means based on the measured temperature of the manifold unit, and controlling the temperature of the manifold unit;
• and
• a SiO.sub.2 layer formed by electrolytic deposition matter to control the inner surface of the manifold unit.

A rapid heat treatment apparatus for rapidly heating semiconductor wafer comprising:

• a process tube, made of a non-metallic material, having multiple zones and an opening through which a semiconductor wafer boat is inserted;
• heater means having heat generating portions for heating dummy substrates in the process tube;
• temperature detector means for detecting (a) a substrate temperature rising pattern obtained in the multiple zones until the dummy substrates reach an intended temperature, (b) a heater temperature rising pattern obtained in the zones until heat generating portions of said heater means reach the intended temperature, and (c) an internal atmosphere temperature rising pattern obtained in the zones until an atmosphere in the process tube reaches the intended temperature, and for detecting a temperature of each of the zones in the process tube and the temperature of the heat generating portions of the heater means, upon heating the substrates;
• a controller means for controlling the heater means on the basis of the detected temperatures, the substrate temperature rising pattern, the heater temperature rising pattern and the internal atmosphere temperature rising pattern to rapidly and uniformly raise the temperature of each substrate until the temperature of the substrates in the zones reaches the intended temperature.