Method for making a high purity aluminum conductor used at ultra low temperature

A method of manufacturing a high purity aluminum conductor used at ultra low temperatures of 30.degree. K. or lower, the aluminum conductor having a purity of 99.99 to 99.9999 weight percent and comprising a polycrystal consisting of crystal grains most of which have specific crystal axes of <111>

• or <100>
• or a mixture thereof, which are essentially oriented in the longitudinal direction of the aluminum conductor, the method comprising the steps of:
• (a) working a high purity polycrystal aluminum material with a purity of 99.99 to 99.9999 weight percent by extrusion process in an area reduction ratio of 1/10 to 1/150 at a temperature range from 150.degree. C. to 350.degree. C. so that a crystal texture is provided to the worked aluminum material;
• (b) optionally cooling the worked aluminum material to room temperature;
• and then
• (c) heating the worked aluminum material to a temperature range from 250.degree. C. to 530.degree. C. and maintaining the worked aluminum material at the temperature for a time ranging from 10 minutes to 120 minutes.