Structure and operation of high voltage supports

A flat panel device, comprising:

• a faceplate structure comprising a faceplate and a light emitting structure;
• a backplate structure comprising a backplate and an electron emitting structure;
• side walls connecting the faceplate and backplate structures to form a sealed enclosure;
• a spacer situated within the enclosure and supporting the backplate structure and the faceplate structure against forces acting in a direction toward the enclosure, the spacer having treated surfaces to inhibit charge buildup on the spacer surfaces;
• and
• first edge metallization situated along a first edge surface of the spacer, wherein the first edge metallization abuts the electron emitting structure and forms an electrical connection between the spacer and the electron emitting structure.

A flat panel device, comprising:

• a faceplate structure comprising a faceplate and a light emitting structure;
• a backplate structure comprising a backplate and an electron emitting structure;
• side walls connecting the faceplate structure and backplate structure to form a sealed enclosure;
• a spacer wall situated within the enclosure and supporting the backplate and the faceplate against forces acting in a direction toward the enclosure, the spacer wall extending substantially from the faceplate structure to the backplate structure, wherein the spacer wall has treated surfaces to inhibit charge buildup on the spacer wall surfaces;
• and
• edge metallization situated between an edge surface of the spacer wall and a selected one of the faceplate structure and the backplate structure, such the edge metallization forms an electrical connection between the spacer wall and the selected one of the faceplate structure and the backplate structure.