Manufacturing method and device for a polycrystalline silicon
AssigneeSamsung Electronics Co., Ltd.
InventorJae-won Lee
Life of this patent
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Abstract
In a manufacturing method and device for a polycrystalline silicon, the manufacturing method forms amorphous silicon on the substrate, and an adiabatic layer between substrate and amorphous silicon if needed. The amorphous silicon is preliminarily heated and melted, and is evenly supplied with heat when the amorphous silicon is re-crystallized, to thereby slow down the re-crystallization. Also, a manufacturing device has first and second light sources for supplying an optical energy to a-Si formed on substrate. A uniformed and large sized grain can be formed, and specifically, cost reduction is possible since the general glass substrate can be used.
Claims17
A method for manufacturing a polycrystalline silicon including recrystallizing an a-Si thin film formed on a substrate, wherein said manufacturing method comprises the steps of:
- preliminarily heating a thin film a-Si prepared on a top side of the substrate using a second laser light source which is positioned below the substrate facing towards a bottom side of the substrate opposite to said top side of the substrate;
- heating and melting said preliminarily heated a-Si using a first laser light source which is positioned opposite said second laser light source above said top side of the substrate;
- and
- re-crystallizing said melted a-Si while heating the melted a-Si using said second laser light source.
A method for manufacturing a polycrystalline silicon comprising the steps of:
- forming an adiabatic layer on a first side of the substrate;
- forming a-Si thin film on said adiabatic layer;
- preliminarily heating said a-Si using a second laser light source positioned on a second side of said substrate opposite said first side;
- heating and melting the preliminarily heated a-Si using a first laser light source positioned on said first side of said substrate;
- and
- re-crystallizing the melted a-Si while heating the melted a-Si using said second laser light source.
Dependencies are inferred from the claim text.