Method of forming single-crystalline thin film

A method of forming a single-crystalline thin film, comprising the steps of:

• preparing film forming conditions capable of forming a film orienting a first specific crystal axis substantially perpendicularly to a base material surface in substantially parallel arrangement of a target surface being irradiated with a laser beam and said base material surface in accordance with laser ablation of irradiating a target with said laser beam thereby depositing a substance being scattered from said target on said base material surface;
• inclining said base material surface with respect to said target surface;
• depositing a first film on said inclined base material surface under said film forming conditions;
• and
• depositing a second film consisting essentially of an oxide superconductor on said first film,
• said base material surface consisting essentially of a polycrystalline or amorphous material,
• said base material surface being so inclined as to form a single-crystalline first film on said base material surface through tendencies of orienting said first specific crystal axis in a direction substantially perpendicular to said target surface and orienting a second specific crystal axis in a direction substantially perpendicular to said base material surface in said film as being deposited,
• said second film being epitaxially grown in accordance with the crystal structure of said first film.