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US 5,606,184 AGranted
Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making
AssigneeMotorola, Inc.
InventorsJonathan K. Abrokwah, Jenn-Hwa Huang, William J. Ooms, Carl L. Shurboff, Jerald A. Hallmark
Life of this patent
Estimating the term…
Abstract
A complementary III-V heterostructure field effect device includes the same refractory ohmic material for providing the contacts (117, 119), to both the N-type and P-type devices. Furthermore, the refractory ohmic contacts (117, 119) directly contact the InGaAs channel layer (16) to provide improved ohmic contact, despite the fact that the structure incorporates an advantageous high aluminum composition barrier layer (18) and an advantageous GaAs cap layer (20).
Claims20
A field effect device comprising:
- a channel layer;
- a barrier layer comprising aluminum, the barrier layer overlying the channel layer, the barrier layer absent over a contact portion of the channel layer;
- an undoped cap layer overlying the barrier layer, the undoped cap layer absent over the contact portion of the channel layer;
- and
- a first refractory ohmic contact comprising a first material, the refractory ohmic contact contacting the contact portion of the channel layer.
2 more elements
A semiconductor device comprising:
- a heterostructure substrate having a buffer layer, a delta doping layer within the buffer layer, a channel layer overlying the buffer layer, and a barrier layer overlying the channel layer, the barrier layer comprising aluminum;
- a source region in a first portion of the channel layer, the barrier layer absent over the source region;
- a drain region in a second portion of the channel layer, the barrier layer absent over the drain region;
- a first refractory ohmic contact contacting the source region, the first refractory ohmic contact comprised of a plurality of refractory layers;
- and
- a second refractory ohmic contact contacting the drain region, the second refractory ohmic contact comprised of the plurality of refractory layers.
3 more elements
A semiconductor device comprising:
- a heterostructure substrate having a buffer layer, a channel layer overlying the buffer layer, and a barrier layer overlying the channel layer, the barrier layer comprising aluminum;
- a source region in a first portion of the channel layer, the barrier layer absent over the source region;
- a drain region in a second portion of the channel layer, the barrier layer absent over the drain region;
- a first refractory ohmic contact contacting the source region, the first refractory ohmic contact comprised of a plurality of refractory layers;
- a second refractory ohmic contact contacting the drain region, the second refractory ohmic contact comprised of the plurality of refractory layers;
- and
- a cap layer overlying the barrier layer and the channel layer, the cap layer absent over the source and drain regions.
4 more elements
A semiconductor device comprising:
- a substrate;
- a buffer layer overlying the substrate;
- a channel layer overlying the buffer layer;
- a barrier layer overlying the channel layer, the barrier layer comprised of aluminum;
- a cap layer overlying the barrier layer;
- a first drain region located in a first portion of the channel layer and a first portion of the buffer layer, the first drain region having a first conductivity type, the cap layer and the barrier layer absent over the first drain region;
- a first source region located in a second portion of the channel layer and a second portion of the buffer layer, the first source region having the first conductivity type, the cap layer and the barrier layer absent over the first source region;
- a first refractory ohmic contact contacting the first drain region, the first refractory ohmic contact comprised of a plurality of refractory metals;
- and
- a second refractory ohmic contact contacting the first source region, the second refractory ohmic contact comprised of the plurality of refractory metals.
7 more elements
Dependencies are inferred from the claim text.