Method for forming low refractive index film comprising silicon dioxide
AssigneeAsahi Glass Company, Limited
InventorsEiichi Ando, Akira Mitsui, Junichi Ebisawa, Koichi Suzuki, Kiyoshi Matsumoto, Takuji Oyama
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Abstract
The present invention relates to a film comprising silicon dioxide as the main component, which contains Zr, etc., and a method for forming it by reactive DC sputtering. It makes it possible to form reflection preventive films, alkali barrier films and various multi-layered films such as multi-layered films for anti-iridescent glass, which contain said film comprising silicon dioxide as the main component, by a physical vapor deposition method without breaking a vacuum.
Claims1
A method for forming a low refractive index film comprising silicon dioxide as the main component, by a DC sputtering method in an oxygen-containing atmosphere by means of a target comprising Si as the main component, which target contains Zr in an amount of from 4 to 35 atoms relative to from 65 to 96 atoms of Si.
Dependencies are inferred from the claim text.