Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor

A semiconductor device, comprising:

• a substrate;
• and
• a plurality of thin film transistors formed on the substrate,
• wherein a first part of the plurality of thin film transistors is provided as a peripheral circuit section of an active matrix type liquid crystal display and a second part of the plurality of thin film transistors is provided as a picture element section of the active matrix type liquid crystal display, and
• the thin film transistors provided as the peripheral circuit section have a crystalline silicon film including crystals having a crystal growth direction parallel to a surface of the substrate and the thin film transistors provided as the picture element section have an amorphous silicon film.

A semiconductor device comprising:

• a substrate;
• and
• a plurality of thin film transistors formed on the substrate,
• wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and
• wherein the crystalline silicon film includes a metal element.

A semiconductor device comprising:

• a substrate;
• and
• a plurality of thin film transistors formed on the substrate,
• wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and
• wherein the crystalline silicon film and the amorphous silicon film each includes a metal element and a concentration of the metal element included in the crystalline silicon film is higher than that included in the amorphous silicon film.

A semiconductor device comprising:

• a substrate;
• and
• a plurality of thin film transistors formed on the substrate,
• wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and
• wherein the crystalline silicon film include a metal element and has a concentrations of 1.times.10.sup.15 to 5.times.10.sup.19 atoms/cm.sup.3.

A semiconductor device comprising:

• a substrate;
• and
• a plurality of thin film transistors formed on the substrate,
• wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and
• wherein the crystalline silicon film and the amorphous silicon film each includes a metal element, a concentration of the metal element included in the crystalline silicon film is higher than that included in the amorphous silicon film, and the concentration of the metal element included in crystalline silicon film is 1.times.10.sup.15 to 5.times.10.sup.19 atoms/cm.sup.3.

A semiconductor device comprising:

• a substrate having a glass strain point of 593.degree. C. or less;
• and
• a plurality of thin film transistors formed on the substrate,
• wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film.

A semiconductor device comprising:

• a substrate;
• and
• a plurality of thin film transistors formed on the substrate,
• wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction which coincides with a carrier moving direction and at least another one of the thin film transistors has an amorphous silicon film.

A semiconductor device for an active matrix type liquid crystal display having an peripheral driving circuit portion and a picture element portion, comprising:

• a substrate;
• and
• a plurality of thin film transistors formed on the substrate,
• wherein at least one of the thin film transistors is provided in the peripheral driving circuit portion and at least another one of the thin film transistors is provided in the picture element portion, and
• wherein the thin film transistor provided in the peripheral driving circuit portion has a crystalline silicon film including crystals having a crystal growth direction which coincides with a carrier moving direction and the thin film transistors provided in the picture element portion has an amorphous silicon film.

A semiconductor device comprising:

• a substrate;
• and
• a plurality of thin film transistors formed on the substrate,
• wherein at least one of the thin film transistors has a semiconductor film which has a first crystallinity and includes crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has a semiconductor film having a second crystallinity lower than the first crystallinity.

A semiconductor device comprising:

• a substrate;
• and
• a plurality of thin film transistors formed on the substrate,
• wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and
• wherein the crystalline silicon film and the amorphous silicon film each includes hydrogen.

A semiconductor device comprising:

• a substrate;
• and
• a plurality of thin film transistors formed on the substrate,
• wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and
• wherein the crystalline silicon film includes nickel.

A semiconductor device comprising:

• a substrate;
• and
• a plurality of thin film transistors formed on the substrate,
• wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and
• wherein the crystalline silicon film and the amorphous silicon film each includes nickel and a concentration of nickel included in the crystalline silicon film is higher than that included in the amorphous silicon film.